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Showing items 166-190 of 268 (11 Page(s) Totally)
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| 國立成功大學 |
2006 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
|
Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
On the hydrogen sensing properties of a Pt-oxide-In0.5Al0.5P Schottky diode
|
Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-09 |
Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
|
Cheng, Chin-Chuan; Liu, Wen-Chau; Lin, Han-Lien; Hong, Ching-Wen; Hsu, Wei-Hsi; Chen, Huey-Ing; Lin, Kun-Wei; Tsai, Yan-Ying |
| 國立成功大學 |
2005-08-22 |
Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor
|
Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2005-03-15 |
Hydrogen sensing properties of a Pt-oxide-Al0.24Ga0.76As high-electron-mobility transistor
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-03 |
Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Liu, Wen-Chau; Chang, Wen-Lung; Chiang, Meng-Hsueh |
| 國立成功大學 |
2005-02 |
DC characterization of InP/InGaAs tunneling emitter bipolar transistor
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Fu, Ssu-I; Lai, Po-Hsien; Tsai, Yan-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2005-02 |
A new Pd-InP Schottky hydrogen sensor fabricated by electrophoretic deposition with Pd nanoparticles
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Chou, Yen-I; Chen, Chia-Ming; Liu, Wen-Chau; Chen, Huey-Ing |
| 國立成功大學 |
2004-12-09 |
Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor
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Cheng, C. C.; Tsai, Y. Y.; Lin, K. W.; Chen, H. I.; Hsu, W. H.; Hong, C. W.; Liu, Wen-Chau |
| 國立成功大學 |
2004-12 |
Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs
|
Chen, Chun-Yuan; Fu, Ssu-I; Cheng, Shiou-Ying; Chang, Chi-Yuan; Tsai, Chien-Hung; Yen, Chih-Hung; Tsai, Sheng-Fu; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2004-11 |
Characteristics of an InP-InGaAs-InGaAsPHBT
|
Chen, Jing-Yuh; Cheng, Shiou-Ying; Chen, Chun-Yuan; Lee, Kuan-Ming; Yen, Chih-Hung; Fu, Ssu-Yi; Tsai, Sheng-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2004-11 |
Temperature-dependent dc characteristics of an InGaAs/InGaAsP heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure
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Chen, Jing-Yuh; Chen, Chun-Yuan; Lee, Kuan-Ming; Yen, Chih-Hung; Tsai, Sheng-Fu; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure
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Lai, Po-Hsien; Chuang, Hung-Ming; Tsai, Sheng-Fu; Kao, Chung-I; Chen, Horng-Rung; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Chuang, Hung-Ming; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2004-06 |
Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-His; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-05-01 |
Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky diode
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Cheng, Chin-Chuan; Tsai, Yan-Yi; Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Liu, Wen-Chau |
| 國立成功大學 |
2004-05 |
New InP-InGaAsHBT with a superlattice-collector structure
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Chen, Jing-Yuh; Guo, Der-Feng; Cheng, Shiou-Ying; Lee, Kuan-Ming; Chen, Chun-Yuan; Chuang, Hung-Ming; Fu, Ssu-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2004-04 |
A double-barrier-emitter triangular-baffier optoelectronic switch
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Guo, Der-Feng; Chen, Jing-Yuh; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-04 |
Characteristics of a new BBOS with an AlGaAs-delta(n(+))-GaAs-InAlGaP collector structure
|
Guo, Der-Feng; Chen, Jing-Yuh; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-03-10 |
Semiconductor diode capable of detecting hydrogen at high temperatures
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Liu, Wen-Chau; Chen, Huey-Ing; Lin, Kun-Wei; Lu, Chun-Tsen |
| 國立成功大學 |
2004-03 |
Comprehensive study of InGaP/AlxGa1-xAs/GaAs heterojunction bipolar transistors with doping concentrations of AlxGa1-xAs graded layers
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Cheng, Shiou-Ying; Chen, Jing-Yuh; Chen, Chun-Yuan; Chuan, Hung-Ming; Yen, Chih-Hung; Lee, Kuan-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2004-03 |
Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
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Chuang, Hung-Ming; Cheng, Shiou-Ying; Chen, Chun-Yuan; Liao, Xin-Da; Lai, Po-Hsien; Kao, Chung-I; Liu, Wen-Chau |
| 國立成功大學 |
2004-02 |
Characteristics of Pd/InGaP Schottky diodes hydrogen sensors
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Lin, Kun-Wei; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Lu, Chun-Tsen; Cheng, Chin-Chuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-01 |
Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)
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Chuang, Hung-Ming; Cheng, Shiou-Ying; Lai, Po-Hsien; Liao, Xin-Da; Chen, Chun-Yuan; Yen, Chih-Hung; Liu, Rong-Chau; Liu, Wen-Chau |
Showing items 166-190 of 268 (11 Page(s) Totally)
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