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Showing items 201-225 of 266 (11 Page(s) Totally)
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| 國立成功大學 |
2003-03 |
A novel InP/InGaAs TEBT for ultralow current operations
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2003-01 |
On the high-performance n(+)-GaAs/p(+)-InGaP/n-GaAs high-barrier gate camel-like HFETs
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Wang, Chih-Kai; Yu, Kuo-Hui; Chiou, Wen-Hui; Chen, Chun-Yuan; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2003-01 |
Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures
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Chen, Chun-Yuan; Chiou, Wen-Huei; Yen, Chih-Hung; Chuang, Hung-Ming; Chen, Jing-Yuh; Cheng, Chin-Chuan; Liu, Wen-Chau |
| 國立成功大學 |
2003 |
InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor
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Chuang, Hung-Ming; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-11 |
A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor
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Liu, Wen-Chau; Lin, Kun-Wei; Chen, Huey-Ing; Wang, Chih-Kai; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Lu, Chun-Tsen |
| 國立成功大學 |
2002-10 |
Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)
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Yu, Kuo-Hui; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Shiou-Ying; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-10 |
Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications
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Chuang, Hung-Ming; Thei, Kong-Beng; Tsai, Sheng-Fu; Lu, Chun-Tsen; Liao, Xin-Da; Lee, Kuan-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2002-09 |
A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)
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Chen, Chun-Yuan; Wang, Wei-Chou; Chiou, Wen-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2002-06 |
Effects of electrical and temperature stress on polysilicon resistors for CMOS technology applications
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Thei, Kong-Beng; Chuang, Hung-Ming; Tsai, Sheng-Fu; Lu, Chun-Tsen; Liao, Xin-Da; Lee, Kuan-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2002-05 |
Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
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Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Wang, Ckih-Kai; Liu, Wen-Chau |
| 國立成功大學 |
2002-03 |
On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure
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Thei, Kong-Beng; Chuang, Hung-Ming; Yu, Kuo-Hui; Liu, Wen-Chau; Liu, Rong-Chau; Lin, Kun-Wei; Su, Chi-Wen; Ho, Chin-Shiung; Wuu, Shou-Gwo; Wang, Chung-Shu |
| 國立成功大學 |
2002-01-17 |
Highly hydrogen-sensitive Pd/InP metaloxide-semiconductor Schottky diode hydrogen sensor
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Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Thei, Kong-Beng; Liu, Wen-Chau; Chen, Huey-Ing |
| 國立成功大學 |
2002-01 |
Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures
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Chiou, Wen-Huei; Pan, Hsi-Jen; Liu, Rong-Chau; Chen, Chun-Yuan; Wang, Chih-Kai; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2001-12 |
Investigation of temperature-dependent characteristics of an n(+)-InGaAs/n-GaAs composite doped channel HFET
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Thei, Kong-Beng |
| 國立成功大學 |
2001-12 |
A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor
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Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Yu, Kuo-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Chen, Jing-Yuh; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations
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Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Wang, Chih-Kai; Chiou, Wen-Huei; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes
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Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Wang, Chik-Kai |
| 國立成功大學 |
2001-09 |
Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor
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Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Cheng, Shiou-Ying; Yu, Kuo-Hui |
| 國立成功大學 |
2001-08-13 |
Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Yen, Chih-Hung; Lin, Kuan-Po; Wu, Cheng-Zu; Chiou, Wen-Hui; Chen, Chin-Ying |
| 國立成功大學 |
2001-08 |
High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (delta-PHEMT's)
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Liu, Wen-Chau; Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Wang, C. K.; Chang, Hong-Ming |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Wang, C. K.; Chuang, Hung-Ming |
| 國立成功大學 |
2001-08 |
A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior
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Liu, Wen-Chau; Wang, Wei-Chou; Yen, Chih-Hung; Cheng, Chin-Chuan; Wu, Cheng-Zu; Chiou, Wen-Hui; Chuen, C. Y. |
| 國立成功大學 |
2001-08 |
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Wu, Cheng-Zu; Lin, Kuan-Po; Yen, Chih-Hung |
| 國立成功大學 |
2001-08 |
A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications
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Thei, Kong-Beng; Liu, Wen-Chau; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Chin-Chuan; Ho, Chin-Hsiung; Su, Chi-Wen; Wuu, Shou-Gwo; Wang, Chung-Shu |
Showing items 201-225 of 266 (11 Page(s) Totally)
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