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Showing items 236-260 of 266 (11 Page(s) Totally)
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| 國立成功大學 |
2000-12 |
Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors
|
Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Chin-Chuan; Yu, Kuo-Hui; Lin, Kun-Wei; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
|
Yen, Chih-Hung; Lin, Kuan-Po; Yu, Kuo-Hui; Chang, Wen-Lung; Lin, Kun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor
|
Yu, Kuo-Hui; Chang, Wen-Lung; Feng, Shun-Ching; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor
|
Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan |
| 國立成功大學 |
2000-10-26 |
InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications
|
Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2000-09 |
Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor
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Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Laih, Lih-Wen; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-08 |
Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications
|
Liu, Wen-Chau; Wang, Wei-Chou; Pan, Hsi-Jen; Chen, Jing-Yuh; Cheng, Shiou-Ying; Lin, Kun-Wei; Yu, Kuo-Hui; Thei, Kong-Beng; Cheng, Chin-Chuan |
| 國立成功大學 |
2000-07 |
A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices
|
Liu, Wen-Chau; Thei, Kong-Beng; Wang, Wei-Chou; Pan, Hsi-Jen; Wuu, Shou-Gwo; Lei, Ming-Ta; Wang, Chung-Shu; Cheng, Shiou-Ying |
| 國立成功大學 |
2000-06 |
Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure
|
Lin, Kuan-Po; Yen, Chih-Hung; Chang, Wen-Lung; Yu, Kuo-Hui; Lin, Kun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2000-04 |
A new wide voltage operation regime double heterojunction bipolar transistor
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Cheng, Shiou-Ying; Pan, Hsi-Jen; Feng, Shun-Ching; Yub, Kuo-Hui; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2000-03 |
Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
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Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen; Feng, Shun-Ching; Yu, Kuo-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-01 |
High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors
|
Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-12-01 |
Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
|
Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Shiou-Ying; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-07-26 |
Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
|
Liu, Wen-Chau; Pan, Hsi-Jen; Cheng, Shiou-Ying; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-07-05 |
Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
|
Cheng, Shiou-Ying; Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-06 |
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT
|
Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen |
| 國立成功大學 |
1999-06 |
New self-aligned T-gate InGaP GaAs field-effect transistors grown by LP-MOCVD
|
Lour, W. S.; Chang, Wen-Lung; Shih, Y. M.; Liu, Wen-Chau |
| 國立成功大學 |
1999-05-21 |
A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3)
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Cheng, Shiou-Ying; Wang, Wei-Chou; Chang, Wen-Lung; Chen, Jing-Yuh; Pan, His-Jen; Liu, Wen-Chau |
| 國立成功大學 |
1999-04-12 |
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors
|
Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou |
| 國立成功大學 |
1999-04-05 |
Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
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Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Yu, Kuo-Hui; Feng, Shung-Ching; Lour, Wen-Shiung |
| 國立成功大學 |
1999-04 |
On the n(+)-GaAs/delta(p(+))-GaInP/n-GaAs high breakdown voltage field-effect transistor
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Chang, Wen-Lung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Pan, Hsi-Jen; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-04 |
Investigation of an InGaP GaAs resonant-tunneling transistor (RTT)
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Cheng, Shiou-Ying; Tsai, Jung-Hui; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau |
| 國立成功大學 |
1998-07-01 |
Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs)
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Liu, Wen-Chau; Tsai, Jung-Hui; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin |
| 國立成功大學 |
1998-06 |
Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor
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Wang, Wei-Chou; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau |
| 國立成功大學 |
1998-04-16 |
Improved breakdown in LP-MOCVD grown n(+)-GaAs/delta(P+)-GaInP/n-GaAs heterojunction camel-gate FET
|
Lour, W. S.; Chang, W. L.; Young, S. T.; Liu, Wen-Chau |
Showing items 236-260 of 266 (11 Page(s) Totally)
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