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Showing items 251-266 of 266 (11 Page(s) Totally)
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| 國立成功大學 |
1999-06 |
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen |
| 國立成功大學 |
1999-06 |
New self-aligned T-gate InGaP GaAs field-effect transistors grown by LP-MOCVD
|
Lour, W. S.; Chang, Wen-Lung; Shih, Y. M.; Liu, Wen-Chau |
| 國立成功大學 |
1999-05-21 |
A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3)
|
Cheng, Shiou-Ying; Wang, Wei-Chou; Chang, Wen-Lung; Chen, Jing-Yuh; Pan, His-Jen; Liu, Wen-Chau |
| 國立成功大學 |
1999-04-12 |
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors
|
Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou |
| 國立成功大學 |
1999-04-05 |
Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
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Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Yu, Kuo-Hui; Feng, Shung-Ching; Lour, Wen-Shiung |
| 國立成功大學 |
1999-04 |
On the n(+)-GaAs/delta(p(+))-GaInP/n-GaAs high breakdown voltage field-effect transistor
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Chang, Wen-Lung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Pan, Hsi-Jen; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-04 |
Investigation of an InGaP GaAs resonant-tunneling transistor (RTT)
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Cheng, Shiou-Ying; Tsai, Jung-Hui; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau |
| 國立成功大學 |
1998-07-01 |
Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs)
|
Liu, Wen-Chau; Tsai, Jung-Hui; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin |
| 國立成功大學 |
1998-06 |
Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor
|
Wang, Wei-Chou; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau |
| 國立成功大學 |
1998-04-16 |
Improved breakdown in LP-MOCVD grown n(+)-GaAs/delta(P+)-GaInP/n-GaAs heterojunction camel-gate FET
|
Lour, W. S.; Chang, W. L.; Young, S. T.; Liu, Wen-Chau |
| 國立成功大學 |
1998-03 |
Comparison of surface recombination effect in GaAs-based heterostructure-emitter and heterostructure-base transistors (HEHBTs)
|
Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
1998-03 |
Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)
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Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
|
Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
|
Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立成功大學 |
1997-10 |
Investigation of step-doped channel heterostructure field-effect transistor
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Laih, L. W.; Tsai, J. H.; Wu, C. Z.; Cheng, S. Y.; Liu, Wen-Chau |
| 國立臺灣大學 |
1996 |
On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)
|
Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung |
Showing items 251-266 of 266 (11 Page(s) Totally)
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