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Showing items 261-266 of 266 (11 Page(s) Totally)
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| 國立成功大學 |
1998-03 |
Comparison of surface recombination effect in GaAs-based heterostructure-emitter and heterostructure-base transistors (HEHBTs)
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Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
1998-03 |
Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs)
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Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
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Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor
|
Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung |
| 國立成功大學 |
1997-10 |
Investigation of step-doped channel heterostructure field-effect transistor
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Laih, L. W.; Tsai, J. H.; Wu, C. Z.; Cheng, S. Y.; Liu, Wen-Chau |
| 國立臺灣大學 |
1996 |
On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)
|
Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung |
Showing items 261-266 of 266 (11 Page(s) Totally)
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