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Showing items 51-75 of 266 (11 Page(s) Totally)
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| 國立成功大學 |
2011-11 |
Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach
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Chen, Tai-You; Chen, Huey-Ing; Huang, Chien-Chang; Hsu, Chi-Shiang; Chiu, Po-Shun; Chou, Po-Cheng; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2011-10 |
Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors
|
Chu, Kuei-Yi; Cheng, Shiou-Ying; Chiang, Meng-Hsueh; Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Liu, Wen-Chau; Cheng, Wen-Yu; Lin, Bin-Cian |
| 國立成功大學 |
2011-08-01 |
On a GaN-Based Light-Emitting Diode With an Indium-Tin-Oxide (ITO) Direct-Ohmic Contact Structure
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Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2011-07-18 |
Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode
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Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Liou, Jian-Kai; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2011-07-14 |
Performance of Metamorphic Transistors with delta-Doped Structures
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Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Chen, Chun-Chia; Kao, Chung-I; Liu, Wen-Chau |
| 國立成功大學 |
2011-07-05 |
Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode
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Chen, Tai-You; Chen, Huey-Ing; Liu, Yi-Jung; Huang, Chien-Chang; Hsu, Chi-Shiang; Chang, Chung-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2011-07 |
On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility. transistor (PHEMT)
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Huang, Chien-Chang; Chen, Huey-Ing; Cheng, Shiou-Ying; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Yi-Chun; Chen, Tai-You; Hsu, Chi-Hsiang; Liu, Wen-Chau |
| 國立成功大學 |
2011-06 |
Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction
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Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Shiang; Liou, Jian-Kai; Liu, Wen-Chau |
| 國立成功大學 |
2011-05 |
Investigation of Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode
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Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Yeong-Jia; Wang, Tzong-Bin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2011-05 |
Ammonia Sensing Properties of a Pt/AlGaN/GaN Schottky Diode
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Chen, Tai-You; Chen, Huey-Ing; Liu, Yi-Jung; Huang, Chien-Chang; Hsu, Chi-Shiang; Chang, Chung-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2010-05 |
A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)
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Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Chen, Tai-You; Huang, Chien-Chang; Hsu, Kai-Siang; Liu, Wen-Chau |
| 國立成功大學 |
2010-04 |
Characteristics of a GaN-Based Light-Emitting Diode With an Inserted p-GaN/i-InGaN Superlattice Structure
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Liu, Yi-Jung; Tsai, Tsung-Yuan; Yen, Chih-Hung; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2010-04 |
Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor
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Tsai, Tsung-Han; Chen, Huey-Ing; Chen, Tai-Yu; Chen, Li-Yang; Liu, Yi-Jung; Huang, Chien-Chang; Hsu, Kai-Siang; Liu, Wen-Chau |
| 國立成功大學 |
2010-03 |
Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts
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Chen, Li-Yang; Cheng, Shiou-Ying; Huang, Chien-Chang; Chen, Tzu-Pin; Tsai, Tsung-Han; Liu, Yi-Jung; Chen, Tai-You; Hsu, Chi-Hsiang; Liu, Wen-Chau |
| 國立成功大學 |
2010-02-01 |
Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates
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Liu, Yi-Jung; Tsai, Tsung-Yuan; Yen, Chih-Hung; Chen, Li-Yang; Tsai, Tsung-Han; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Hsiang; Liu, Wen-Chau |
| 國立成功大學 |
2010-02 |
Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure
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Liu, Yi-Jung; Yen, Chih-Hung; Yu, Kuo-Hui; Lin, Pei-Ling; Chen, Li-Yang; Tsai, Tsung-Han; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2010 |
On an AlGaInP Multiple Quantum Well Light Emitting Diode with a Thin Carbon-Doped GaP Contact Layer Structure
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Tsai, Tsung-Yuan; Liu, Yi-Jung; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2010 |
Performance of a GaAs-Based Pseudomorphic Transistor with the Electroless-Plated Surface Treated Gate
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Chen, Li-Yang; Chen, Huey-Ing; Cheng, Shiou-Ying; Tsai, Tsung-Han; Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Hsiang; Liu, Wen-Chau |
| 國立成功大學 |
2009-11 |
On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure
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Liu, Yi-Jung; Yen, Chih-Hung; Chen, Li-Yang; Tsai, Tsung-Han; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2009-11 |
Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes
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Liu, Yi-Jung; Yen, Chih-Hung; Hsu, Chia-Hao; Yu, Kuo-Hui; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2009-10 |
Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments
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Chen, Tzu-Pin; Lee, Chi-Jhung; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Yi-Jhung; Huang, Chien-Chang; Chen, Tai-You; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2009-08-03 |
Characteristics of an electroless plated-gate transistor
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Chen, Li-Yang; Chen, Huey-Ing; Huang, Chien-Chang; Huang, Yi-Wen; Tsai, Tsung-Han; Liu, Yi-Chun; Chen, Tai-You; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2009-08 |
Characteristics of a Low-Damage GaN-Based Light-Emitting Diode Using a KOH-Treated Wet-Etching Approach
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Liu, Yi-Jung; Yen, Chih-Hung; Yu, Kuo-Hui; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2009-06-04 |
On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor
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Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Kuo, Yaw-Wen; Chiu, Po-Shun; Chang, Chung-Fu; Chen, Li-Yang; Chen, Tzu-Pin; Liu, Yi-Jung; Liu, Wen-Chau |
| 國立成功大學 |
2009-05-21 |
InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure
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Tsai, Jung-Hui; Lour, W. S.; Liu, Wen-Chau |
Showing items 51-75 of 266 (11 Page(s) Totally)
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