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Showing items 81-105 of 266 (11 Page(s) Totally)
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| 國立成功大學 |
2009-02 |
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
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Chen, Tzu-Pin; Lee, Chi-Jhung; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2009-01-05 |
Hydrogen sensing properties of a metamorphic high electron mobility transistor
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Tsai, Tsung-Han; Chen, Huey-Ing; Chang, Chung-Fu; Chiu, Po-Shun; Liu, Yi-Chun; Chen, Li-Yang; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2009-01 |
Microwave complementary doped-channel field-effect transistors
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Liu, Wen-Chau; Li, Chien-Ming; Su, Ning-Xing; Wu, Yi-Zhen; Huang, Yin-Shan |
| 國立成功大學 |
2009-01 |
Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode
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Chang, Chung-Fu; Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Chen, Tzu-Pin; Chen, Li-Yang; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2009 |
Temperature-Dependent Characteristics of a Low Temperature Deposition Approach on a Pseudomorphic High Electron Mobility Transistor
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Chen, Li-Yang; Chen, Huey-Ing; Cheng, Shiou-Ying; Chen, Tzu-Pin; Tsai, Tsung-Han; Liu, Yi-Jung; Huang, Yi-Wen; Huang, Chien-Chang; Liu, Wen-Chau |
| 國立成功大學 |
2009 |
Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
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Chen, Tzu-Pin; Lee, Chi-Jhung; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Ku, Ghun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2008-12 |
Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor
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Chen, Li-Yang; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2008-12 |
Investigation on a Pd-AlGaN/GaN Schottky Diode-Type Hydrogen Sensor With Ultrahigh Sensing Responses
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Tsai, Tsung-Han; Chen, Huey-Ing; Liu, I-Ping; Hung, Ching-Wen; Chen, Tzu-Pin; Chen, Li-Yang; Liu, Yi-Jung; Liu, Wen-Chau |
| 國立成功大學 |
2008-11 |
On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple delta-Doped Sheets
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Chen, Li-Yang; Cheng, Shiou-Ying; Chen, Tzu-Pin; Chu, Kuei-Yi; Tsai, Tsung-Han; Liu, Yi-Chun; Liao, Xin-Da; Liu, Wen-Chau |
| 國立成功大學 |
2008-11 |
A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure
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Yen, Chih-Hung; Liu, Yi-Jung; Huang, Nan-Yi; Yu, Kuo-Hui; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Lee, Chong-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-09-25 |
Transient response of a transistor-based hydrogen sensor
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Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, I-Ping; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-07-28 |
Comprehensive study of a Pd/Al0.24Ga0.76As-based field-effect-transistor-type hydrogen sensor
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Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-07-15 |
Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode
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Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, I-Ping; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-06-16 |
Further investigation of a hydrogen-sensing Pd/GaAs heterostructure field-effect transistor (HFET)
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Hung, Ching-Wen; Tsai, Tsung-Han; Chen, Huey-Ing; Tsai, Yan-Ying; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2008-06-05 |
Improved performance of non-annealed ohmic-recess metamorphic high electron mobility transistor
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Chen, Li-Yang; Cheng, Shiou-Ying; Chu, Kuei-Yi; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008-06-01 |
Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector
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Chen, Tzu-Pin; Chen, Wei-Hsin; Lee, Chi-Jhung; Chu, Kuei-Yi; Chen, Li-Yang; Hung, Ching-Wen; Tsai, Tsung-Han; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2008-06 |
Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode
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Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Hung, Ching-Wen; Hsu, Chia-Hao; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-04 |
Influence of emitter-ledge thickness on the surface-recombination mechanism of InGaP/GaAs heterojunction bipolar transistor
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Chu, Kuei-Yi; Cheng, Shiou-Ying; Chen, Tzu-Pin; Hung, Ching-Wen; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau; Chen, Lu-An |
| 國立成功大學 |
2008-04 |
Hydrogen sensing characteristics of a Pd/AlGaN/GaN Schottky diode
|
Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Hung, Ching-Wen; Hsu, Chia-Hao; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Chang, Chung-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2008-04 |
On the hydrogen sensing behaviors of an InAlAs-based Schottky diode with a thin Pt catalytic metal
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Yen, Chih-Hung; Hung, Ching-Wen; Chen, Huey-Ing; Tsai, Tsung-Han; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-03 |
Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor
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Tsai, Jung-Hui; Liu, Wen-Chau; Guo, D. F.; Kang, Y. Ch.; Chiu, Shao-Yen; Lone, W. Sh. |
| 國立成功大學 |
2008-03 |
Comparative study on temperature-dependent characteristics of InP/InGaAs single- and double-heterojunction bipolar transistors
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Chen, Wei-Hsin; Chen, Tzu-Pin; Lee, Chi-Jhung; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008-03 |
Characteristics of an InGaP/AlXGa1-XAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT)
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Cheng, Shiou-Ying; Chu, Kuei-Yi; Chen, Li-Yang; Chen, Lu-An; Liu, Wen-Chau |
| 國立成功大學 |
2008-02 |
Improved performances of a two-step passivated heterojunction bipolar transistor
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Cheng, Shiou-Ying; Fu, Ssu-I; Chu, Kuel-Yi; Chen, Tzu-Pin; Liu, Wen-Chau; Chen, Li-Yang |
| 國立成功大學 |
2008-02 |
Investigation on heterostructural optoelectronic switches
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Guo, Der-Feng; Tsai, Jung-Hui; Weng, Tzu-Yen; Yeng, Chih-Hung; Lai, Po-Hsien; Fu, Ssu-Yi; Hung, Ching-Wen; Liu, Wen-Chau |
Showing items 81-105 of 266 (11 Page(s) Totally)
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