臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 156-165 of 949 (95 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2021-09-02T00:08:59Z	Indoor depth completion with boundary consistency and self-attention	Huang Y.-K;Wu T.-H;Liu Y.-C;Hsu W.H.; Huang Y.-K; Wu T.-H; Liu Y.-C; Hsu W.H.; WINSTON HSU
臺大學術典藏	2021-09-02T00:04:56Z	β-glucan therapy converts the inhibition of myeloid-derived suppressor cells in oral cancer patients	Lo Y.-W;Lee A.Y.-L;Liu Y.-C;Ko H.-H;Peng H.-H;Lee H.-C;Pan P.-Y;Chiang C.-P;Cheng S.-J.; Lo Y.-W; Lee A.Y.-L; Liu Y.-C; Ko H.-H; Peng H.-H; Lee H.-C; Pan P.-Y; Chiang C.-P; Cheng S.-J.; HSIANG-CHIEH LEE
臺大學術典藏	2021-09-02T00:04:00Z	Record Low Contact Resistivity to Ge:B (8.110-10Omega-cm-2) and GeSn:B (4.110-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping	Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:58Z	Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels	Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:58Z	Oxygen-Related Reliability of Amorphous InGaZnO Thin Film Transistors	Yen C.-C;Tai A.-H;Liu Y.-C;Chen T.-L;Chou C.-H;Liu C.W.; Yen C.-C; Tai A.-H; Liu Y.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:57Z	Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers	Yen C.-C;Tai A.-H;Liu Y.-C;Yeh C.-H;Liu C.W.; Yen C.-C; Tai A.-H; Liu Y.-C; Yeh C.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:54Z	First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise	Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:54Z	First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V	Tu C.-T;Huang Y.-S;Lu F.-L;Liu H.-H;Lin C.-Y;Liu Y.-C;Liu C.W.; Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:53Z	First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels	Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU
臺大學術典藏	2021-08-31T02:35:29Z	Influence of different treatment strategies on new-onset atrial fibrillation among patients with primary aldosteronism: A nationwide longitudinal cohort-based study	CHIEN-TING PAN; Liao C.-W.; Tsai C.-H.; Chen Z.-W.; Chen L.; Hung C.-S.; Liu Y.-C.; Lin P.-C.; Chang C.-C.; Chang Y.-Y.; Wu V.-C.; Lin Y.-H.; TAIPAI study group*

Showing items 156-165 of 949 (95 Page(s) Totally)
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