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Institution Date Title Author
國立交通大學 2020-07-01T05:22:05Z Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current Jia, Xingyu; Chen, Sung-Wen Huang; Liu, Yajin; Hou, Xu; Zhang, Yonghui; Zhang, Zi-Hui; Kuo, Hao-Chung
國立交通大學 2019-09-02T07:46:19Z Polarization Engineering to Manipulate the Breakdown Voltage for GaN-Based PIN Diodes Hou, Xu; Chen, Xin; Jia, Xingyu; Liu, Yajin; Zhang, Yonghui; Zhang, Zi-Hui; Kuo, Hao-Chung

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