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| 臺大學術典藏 |
2009-03-25T07:52:47Z |
Asymmetrical X-ray reflection of SiGeC/Si heterostructures
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Liu, C. W.; Tseng, Y. D.; Chern, M. Y.Liucw; Liu, C. W.; Tseng, Y. D.; Chern, M. Y.; LiuCW |
| 臺大學術典藏 |
2007 |
Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors
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Yang, Y.-J.; Ho, W. S.; Huang, C.-F.; Chang, S. T.; Liu, C. W.; Yang, Y.-J.; Ho, W. S.; Huang, C.-F.; Chang, S. T.; Liu, C. W.; YangYJ; LiuCW |
| 臺大學術典藏 |
2004 |
Evidence of Si/SiGe heterojunction roughness scattering
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Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.Liucw; Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; LiuCW |
| 臺大學術典藏 |
2003 |
Strain-induced growth of SiO2 dots by liquid phase deposition
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Shie, C.-R.; Chen, Pang-Shiu; LiuCW; Lee, M. H.; Chen, K.-F.; Hsu, B.-C.; Liu, C. W.; Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu |
| 臺大學術典藏 |
2001 |
Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation
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Liu, C. W.; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; Chen, Miin-Jang; Lin, Ching-Fuh; Liu, C. W.; Lin, C.-H.; Lee, M. H.; Chang, S. T.; Liu, Y.-H.; Chen, Miin-Jang; Lin, Ching-Fuh; LiuCW; ChenMiinJang; LinChingFuh |
| 臺大學術典藏 |
1999-12 |
Light emission and detection by metal oxide silicon tunneling diodes
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Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; Liu, C.W.; Lee, M.H.; Lin, C.F.; Lin, I.C.; Liu, W.T.; Lin, H.H.; LiuCW |
| 臺大學術典藏 |
1999 |
Thermal stability of Si/Si1 – x – yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
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Liu, C. W.; Tseng, Y. D.; Chern, M. Y.; Chang, C. L.; Sturm, J. C.Liucw; Liu, C. W.; Tseng, Y. D.; Chern, M. Y.; Chang, C. L.; Sturm, J. C.; LiuCW |
Showing items 1-7 of 7 (1 Page(s) Totally)
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