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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2015-07-21T08:31:06Z |
3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current
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Hsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung |
| 國立交通大學 |
2014-12-12T02:33:38Z |
應用於高密度資料儲存之交錯電阻式記憶體之陣列層級分析
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羅淳立; Lo, Chun-Li; 侯拓宏; Hou, Tuo-Hung |
| 國立交通大學 |
2014-12-08T15:32:53Z |
Statistical Model and Rapid Prediction of RRAM SET Speed-Disturb Dilemma
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Luo, Wun-Cheng; Liu, Jen-Chieh; Lin, Yen-Chuan; Lo, Chun-Li; Huang, Jiun-Jia; Lin, Kuan-Liang; Hou, Tuo-Hung |
| 國立交通大學 |
2014-12-08T15:32:43Z |
On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class Memory
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Lo, Chun-Li; Chen, Mei-Chin; Huang, Jiun-Jia; Hou, Tuo-Hung |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Bipolar Ni/TiO2/HfO2/Ni RRAM With Multilevel States and Self-Rectifying Characteristics
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Hsu, Chung-Wei; Hou, Tuo-Hung; Chen, Mei-Chin; Wang, I-Ting; Lo, Chun-Li |
| 國立交通大學 |
2014-12-08T15:30:30Z |
Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array
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Lo, Chun-Li; Hou, Tuo-Hung; Chen, Mei-Chin; Huang, Jiun-Jia |
Showing items 1-6 of 6 (1 Page(s) Totally)
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