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Institution Date Title Author
國立交通大學 2015-07-21T08:31:06Z 3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current Hsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung
國立交通大學 2014-12-12T02:33:38Z 應用於高密度資料儲存之交錯電阻式記憶體之陣列層級分析 羅淳立; Lo, Chun-Li; 侯拓宏; Hou, Tuo-Hung
國立交通大學 2014-12-08T15:32:53Z Statistical Model and Rapid Prediction of RRAM SET Speed-Disturb Dilemma Luo, Wun-Cheng; Liu, Jen-Chieh; Lin, Yen-Chuan; Lo, Chun-Li; Huang, Jiun-Jia; Lin, Kuan-Liang; Hou, Tuo-Hung
國立交通大學 2014-12-08T15:32:43Z On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class Memory Lo, Chun-Li; Chen, Mei-Chin; Huang, Jiun-Jia; Hou, Tuo-Hung
國立交通大學 2014-12-08T15:32:05Z Bipolar Ni/TiO2/HfO2/Ni RRAM With Multilevel States and Self-Rectifying Characteristics Hsu, Chung-Wei; Hou, Tuo-Hung; Chen, Mei-Chin; Wang, I-Ting; Lo, Chun-Li
國立交通大學 2014-12-08T15:30:30Z Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array Lo, Chun-Li; Hou, Tuo-Hung; Chen, Mei-Chin; Huang, Jiun-Jia

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