|
English
|
正體中文
|
简体中文
|
总笔数 :2823698
|
|
造访人次 :
30490394
在线人数 :
1144
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"lo chun li"的相关文件
显示项目 1-6 / 6 (共1页) 1 每页显示[10|25|50]项目
國立交通大學 |
2015-07-21T08:31:06Z |
3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current
|
Hsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung |
國立交通大學 |
2014-12-12T02:33:38Z |
應用於高密度資料儲存之交錯電阻式記憶體之陣列層級分析
|
羅淳立; Lo, Chun-Li; 侯拓宏; Hou, Tuo-Hung |
國立交通大學 |
2014-12-08T15:32:53Z |
Statistical Model and Rapid Prediction of RRAM SET Speed-Disturb Dilemma
|
Luo, Wun-Cheng; Liu, Jen-Chieh; Lin, Yen-Chuan; Lo, Chun-Li; Huang, Jiun-Jia; Lin, Kuan-Liang; Hou, Tuo-Hung |
國立交通大學 |
2014-12-08T15:32:43Z |
On the Potential of CRS, 1D1R, and 1S1R Crossbar RRAM for Storage-Class Memory
|
Lo, Chun-Li; Chen, Mei-Chin; Huang, Jiun-Jia; Hou, Tuo-Hung |
國立交通大學 |
2014-12-08T15:32:05Z |
Bipolar Ni/TiO2/HfO2/Ni RRAM With Multilevel States and Self-Rectifying Characteristics
|
Hsu, Chung-Wei; Hou, Tuo-Hung; Chen, Mei-Chin; Wang, I-Ting; Lo, Chun-Li |
國立交通大學 |
2014-12-08T15:30:30Z |
Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array
|
Lo, Chun-Li; Hou, Tuo-Hung; Chen, Mei-Chin; Huang, Jiun-Jia |
显示项目 1-6 / 6 (共1页) 1 每页显示[10|25|50]项目
|