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國立交通大學 |
2014-12-08T15:26:27Z |
Localization of NBTI-induced oxide damage in direct tunneling regime gate oxide pMOSFET using a novel low gate-leakage gated-diode (L-2-GD) method
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Chung, SS; Lo, DK; Yang, JJ; Lin, TC |
國立交通大學 |
2014-12-08T15:26:23Z |
An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices
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Chen, SJ; Lin, TC; Lo, DK; Yang, JJ; Chung, SS; Kao, TY; Shiue, RY; Wang, CJ; Peng, YK |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
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