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Institution Date Title Author
國立成功大學 2006-09-15 Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells Lo, Ikai; Lian, J. R.; Wang, H. Y.; Gau, M. H.; Tsai, J. K.; Chiang, Jih-Chen; Li, Y. J.; Hsu, Wei-Chou
國立成功大學 2004-09 Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai
國立臺灣大學 2004 Exchange-enhanced g-factors in an Al0.25Ga0.75N/GaN two-dimensional electron system Cho, K. S.; Huang, Tsai-Yu; Huang, Chao-Ping; Chiu, Yi-Hsing; Liang, C.-T.; Chen, Y. F.; Lo, Ikai
國立臺灣大學 1998 Study of persistent photoconductivity in semimetallic Al0.2Ga0.8Sb/InAs quantum wells Tsai, L. C.; Fan, J. C.; Chen, Y. F.; Lo, Ikai

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