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Showing items 1-25 of 29 (2 Page(s) Totally)
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| 國立交通大學 |
2018-08-21T05:53:18Z |
Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory
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Su, Yu-Ting; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chu, Tian-Jian; Chen, Hsin-Lu; Chen, Min-Chen; Yang, Chih-Cheng; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:21Z |
Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:06Z |
Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memory
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Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:57Z |
Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Su, Yu-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Yang, Chih-Cheng; Chen, Min-Chen; Tu, Chun-Hao; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:50Z |
Effects of erbium doping of indium tin oxide electrode in resistive random access memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:32Z |
Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-12 |
Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Cheng-Chi; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Chen, Min-Chen; Wang, Ruey-Chi; Leu, Ching-Chich; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-11 |
Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Su, Yu-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Yang, Chih-Cheng; Chen, Min-Chen; Tu, Chun-Hao; Chen, Kai-Huang; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-06 |
Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memory
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Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-06 |
Complementary resistive switching behavior for conductive bridge random access memory
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Zheng, Hao-Xuan; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Shih, Chih-Cheng; Zhang, Rui; Chen, Kai-Huang; Wang, Ming-Hui; Zheng, Jin-Cheng; Lo, Ikai; Wu, Cheng-Hsien; Tseng, Yi-Ting; Sze, Simon M. |
| 國立成功大學 |
2016-05 |
Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-04 |
Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. |
| 國立成功大學 |
2016-03 |
Effects of erbium doping of indium tin oxide electrode in resistive random access memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-03 |
Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory
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Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2015-07-21T11:21:07Z |
The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN
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Shih, Cheng-Hung; Lo, Ikai; You, Shuo-Ting; Tsai, Cheng-Da; Tseng, Bae-Heng; Chen, Yun-Feng; Chen, Chiao-Hsin; Lee, Chuo-Han; Lee, Wei-I; Hsu, Gary Z. L. |
| 淡江大學 |
2014-09 |
Optical spectroscopic investigation of m-plane GaN thin films
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Antaryami Mohanta; Tzeng, Yan-Zhi; Lee, Meng-En; Ling, Dah-Chin; Wang, Ying-Chieh; Lo, Ikai; Jang, Der-Jun |
| 淡江大學 |
2012 |
Spin splitting in bulk wurtzite AlN under biaxial strain
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Kao, Hsiu-Fen; Lo, Ikai; Chiang, Jih-Chen; Lee, Meng-En; Wu, C. L.; Wang, W. T.; Chen, Chun-Nan; Hsu, Y. C. |
| 淡江大學 |
2010-09 |
Crystal-Field and Strain Effects on Minimum-Spin-Splitting Surfaces in Bulk Wurtzite Materials
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Wu, Chieh-Lung; Tsay, Shiow-Fon; Wang, Wan-Tsang; Gau, Ming-Hong; Chiang, Jih-Chen; Lo, Ikai; Kao, Hsiu-Fen; Hsu, Yu-Chi; Jang, Der-Jun; Lee, Meng-En; Chen, Chun-Nan |
| 淡江大學 |
2008-09 |
Spin-splitting in an AlxGa1−xN/GaN nanowire for a quantum-ring interferometer
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Lo, Ikai; Pang, Wen-yuan; Chen, Yen-liang; Hsu, Yu-chi; Chiang, Jih-chen; Lin, Wei-hsin; Chiu, Wan-ting; Tsai, Jenn-kai; 陳俊男; Chen, Chun-nan |
| 淡江大學 |
2008-09 |
Giant Optical Anisotropy in M-plane GaN/AlGaN Quantum Wells due to Crystal-Field Effect
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Chen, Chun-Nan; Su, Wei-Long; Chang, Kuo-Ching; Chang, Sheng-Hsiung; Chiang, Jih-Chen; Lo, Ikai; Wang, Wan-Tsang; Kao, Hsiu-Fen; Lee, Meng-En |
| 淡江大學 |
2008-07 |
Application of Block Diagonal Technique to Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaAs Zincblende Bulk and Quantum Wells
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Chen, Chun-nan; Su, Wei-long; Chang, Kuo-ching; Chang, Sheng-hsiung; Chiang, Jih-chen; Lo, Ikai; Wang, Wan-tsang; Kao, Hsiu-fen; Lee, Meng-en |
| 淡江大學 |
2008-03 |
Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect
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Chen, Chun-Nan; Su, Wei-Long; Chiang, Jih-Chen; Lo, Ikai; Wang, Wan-Tsang; Lee, Meng-En |
| 國立臺灣大學 |
2008 |
Photoluminescence studies of GaN epilayer–nanocrystals grown on γ-LiAlO2 substrate
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Hsu, C.H.; Kuo, F.C.; Lee, C.S.; Chang, Y.H.; Chao, H.Y.; Cheng, J.H.; Lo, Ikai; Hsieh, C.H.; Chou, M.C. |
| 淡江大學 |
2007-08 |
Dresselhaus effect in bulk wurtzite materials
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Wang, Wan Tsang; Wu, Chung Lin; Tsay, Shiow Fon; Gau, Ming Hong; Lo, Ikai; Kao, Hsiu Fen; Jang, Der Jun; Chiang, Jih Chen; Lee, Meng En; Chang, Yi Tsung; Chen, Chun Nan; Hsueh, Hung Chung |
Showing items 1-25 of 29 (2 Page(s) Totally)
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View [10|25|50] records per page
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