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"lo wen hung"的相關文件
顯示項目 16-25 / 39 (共4頁)
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| 國立交通大學 |
2014-12-08T15:29:13Z |
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Guan-Ru; Chen, Hua-Mao; Lu, Ying-Shin; Wang, Bin-Wei; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:12Z |
Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor-field-effect-transistors
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Lo, Wen-Hung; Chang, Ting-Chang; Dai, Chih-Hao; Chung, Wan-Lin; Chen, Ching-En; Ho, Szu-Han; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2014-12-08T15:29:12Z |
Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
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Ho, Szu-Han; Chang, Ting-Chang; Wang, Bin-Wei; Lu, Ying-Shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Cao, Xi-Xin |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Lu, Ying-shin; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Chen, Hua-Mao; Wu, Chi-Wei; Luo, Hung-Ping; Liu, Guan-Ru; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:19Z |
Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors
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Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2014-12-08T15:24:06Z |
Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Ho, Szu-Han; Hsieh, Tien-Yu; Lo, Wen-Hung; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Dai, Bai-Shan; Chen, Hua-Mao; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:24:05Z |
Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
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Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:22:43Z |
Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
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Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2014-12-08T15:21:54Z |
Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation
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Lo, Wen-hung; Chang, Ting-Chang; Dai, Chih-Hao; Chung, Wan-Lin; Chen, Ching-En; Ho, Szu-Han; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks
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Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Hung, Ya-Chi; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Chen, Hua-Mao; Dai, Bai-Shan; Tsai, Tsung-Ming; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
顯示項目 16-25 / 39 (共4頁)
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