|
"lo wen hung"的相關文件
顯示項目 21-30 / 39 (共4頁)
<< < 1 2 3 4 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:24:06Z |
Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2/Ti1-xNx Gate Stacks
|
Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Ho, Szu-Han; Hsieh, Tien-Yu; Lo, Wen-Hung; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Dai, Bai-Shan; Chen, Hua-Mao; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:24:05Z |
Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
|
Ho, Szu-Han; Chang, Ting-Chang; Wu, Chi-Wei; Lo, Wen-Hung; Chen, Ching-En; Tsai, Jyun-Yu; Luo, Hung-Ping; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:22:43Z |
Charge trapping induced drain-induced-barrier-lowering in HfO2/TiN p-channel metal-oxide-semiconductor-field-effect-transistors under hot carrier stress
|
Lo, Wen-Hung; Chang, Ting-Chang; Tsai, Jyun-Yu; Dai, Chih-Hao; Chen, Ching-En; Ho, Szu-Han; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2014-12-08T15:21:54Z |
Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation
|
Lo, Wen-hung; Chang, Ting-Chang; Dai, Chih-Hao; Chung, Wan-Lin; Chen, Ching-En; Ho, Szu-Han; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks
|
Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Hung, Ya-Chi; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chung, Wan-Lin; Chen, Hua-Mao; Dai, Bai-Shan; Tsai, Tsung-Ming; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:12:06Z |
Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
|
Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Lo, Wen-Hung; Ho, Szu-Han; Chen, Ching-En; Shih, Jou-Miao; Chen, Hua-Mao; Dai, Bai-Shan; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:06:49Z |
Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
|
Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Chen, Shih-Ching; Tsai, Chih-Tsung; Lo, Wen-Hung; Ho, Szu-Han; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 國立交通大學 |
2014-12-08T15:06:48Z |
On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs
|
Dai, Chih-Hao; Chang, Ting-Chang; Chu, Ann-Kuo; Kuo, Yuan-Jui; Chen, Shih-Ching; Tsai, Chih-Chung; Ho, Szu-Han; Lo, Wen-Hung; Xia, Guangrui; Cheng, Osbert; Huang, Cheng Tung |
| 朝陽科技大學 |
2013-12-31 |
企業高層領導管理對於設計創新績效之影響－以華碩、太平洋自行車，與奇想創造為例
|
羅文鴻; Lo, Wen-Hung |
| 國立成功大學 |
2013-11-07 |
High-k shallow traps observed by charge pumping with varying discharging times
|
Ho, Szu-Han;Chang, Ting-Chang;Lu, Ying-Hsin;Wang, Bin-Wei;Lo, Wen-Hung;Chen, Ching-En;Tsai, Jyun-Yu;Chen, Hua-Mao;Liu, Kuan-Ju;Tseng, Tseung-Yuen;Cheng, Osbert;Huang, Cheng-Tung;Chen, Tsai-Fu;Cao, Xi-Xin |
顯示項目 21-30 / 39 (共4頁)
<< < 1 2 3 4 > >>
每頁顯示[10|25|50]項目
|
