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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:26:55Z	Investigation on ESD robustness of CMOS devices in a 1.8-v 0.15-mu m partially-depleted SOI salicide CMOS technology	Ker, MD; Hong, KK; Chen, TY; Tang, H; Huang, SC; Chen, SS; Huang, CT; Wang, MC; Loh, YT

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