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"loong wa"的相关文件
显示项目 1-32 / 32 (共1页)
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| 國立交通大學 |
2014-12-08T15:49:17Z |
TiSixOy as an absorptive shifter for embedded phase-shifting mask in 248 nm and the modification of R-T method for the determination of shifter's n and k
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Loong, WA; Chen, CW; Chang, YH; Lin, CM; Cui, Z; Lung, CA |
| 國立交通大學 |
2014-12-08T15:46:39Z |
TiSixNy and TiSixOyNz as embedded materials for attenuated phase-shifting mask in 193 nm
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:45:15Z |
AlSixNy as an embedded layer for attenuated phase-shifting mask in 193 nm and the utilization of a chemically amplified negative resist NEB-22 for maskmaking
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Loong, WA; Lin, CM |
| 國立交通大學 |
2014-12-08T15:44:44Z |
Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and k
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:44:36Z |
AlSixOy as a high-transmittance embedded material of ternary attenuated phase-shifting mask and correlation between chemical composition and optical properties of AlSixOy in 193 nm lithography
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:43:29Z |
The simulation of application of high transmittance AttPSM for sub-100 nm pattern in 248 nm lithography
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:43:29Z |
The correlation between the chemical compositions and optical properties of TiSixNy as an embedded layer for AttPSM in 193 nm
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Loong, WA; Lin, CM; Tseng, SP; Yeh, WL |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Chemical stability of embedded material for attenuated phase-shifting mask and application of high-transmittance attenuated phase-shifting mask for 0.1 mu m contact pattern in 193 nm lithography
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Lin, CM; Loong, WA |
| 國立交通大學 |
2014-12-08T15:27:54Z |
SIMULATION AND FABRICATION OF A NEW PHASE-SHIFTING MASK FOR 0.35 MU-M CONTACT HOLE PATTERN TRANSFER - HALF-TONE-RIM
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LOONG, WA; SHY, SL; GUO, GC; CHOU, YL |
| 國立交通大學 |
2014-12-08T15:27:43Z |
SIMULATION STUDY OF A NEW PHASE-SHIFTING MASK - HALFTONE-RIM
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LOONG, WA; YEH, CH; SHY, SL |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm
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Lin, CM; Chang, KW; Lee, MD; Loong, WA |
| 國立交通大學 |
2014-12-08T15:17:19Z |
Modified reflectance-transmittance method for the metrology of thin film optical properties
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Yeh, KT; Lin, CH; Hu, JR; Loong, WA |
| 國立交通大學 |
2014-12-08T15:17:01Z |
Simulations of mask error enhancement factor in 193nm immersion lithography
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Yeh, KT; Loong, WA |
| 國立交通大學 |
2014-12-08T15:05:51Z |
POLY(FORMYLOXYSTYRENE) AS LIFT-OFF RESIST
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LOONG, WA; HONG, WM |
| 國立交通大學 |
2014-12-08T15:05:43Z |
PHOTOACID CATALYZED PHOTO-FRIES REARRANGEMENTS OF POLY(PARA-FORMYLOXYSTYRENE) AND FORMYLOXYNOVOLAC
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LOONG, WA; CHEN, RH |
| 國立交通大學 |
2014-12-08T15:05:25Z |
A DIRECT APPROACH TO THE MODELING OF POLYDIHEXYLSILANE AS A CONTRAST ENHANCEMENT MATERIAL
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LOONG, WA; PAN, HT |
| 國立交通大學 |
2014-12-08T15:05:19Z |
ENHANCED OXYGEN REACTIVE ION ETCHING RESISTANCE OF DIAZONAPHTHOQUINONE-POLY (FORMYLOXYSTYRENE) RESIST SYSTEM BY PHOTOACID CATALYZED PHOTO-FRIES REARRANGEMENT AND POTASSIUM-ION TREATMENT IN AQUEOUS-SOLUTION
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LOONG, WA; SU, AN |
| 國立交通大學 |
2014-12-08T15:05:19Z |
THE MODELING AND SIMULATION OF NONLINEAR PHOTOBLEACHING MATERIALS
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LOONG, WA; PAN, HT |
| 國立交通大學 |
2014-12-08T15:05:18Z |
ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT
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LOONG, WA; CHANG, HW |
| 國立交通大學 |
2014-12-08T15:05:18Z |
KEV ION-BEAM-EXPOSED POLY(METHYLISOPROPENYLKETONE) AND POLY(PHENYLISOPROPENYLKETONE)
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LOONG, WA; PENG, NT |
| 國立交通大學 |
2014-12-08T15:05:16Z |
PHOTOACID CATALYZED MAIN CHAIN SCISSION OF POLY(BUTENE-1 SULFONE) AS A DEEP UV POSITIVE RESIST
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LOONG, WA; CHANG, HW |
| 國立交通大學 |
2014-12-08T15:05:13Z |
ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS
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LOONG, WA; YEN, MS |
| 國立交通大學 |
2014-12-08T15:05:12Z |
OXIDATION OF GAAS SURFACE BY OXYGEN PLASMA AND ITS APPLICATION AS AN ANTIREFLECTION LAYER
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LOONG, WA; CHANG, HL |
| 國立交通大學 |
2014-12-08T15:05:10Z |
PROCESSES OF TOP-IMAGED SINGLE-LAYER RESISTS BY POTASSIUM-ION TREATMENT IN SOLUTION
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LOONG, WA; SU, AN; WANG, JL; CHU, CY |
| 國立交通大學 |
2014-12-08T15:05:10Z |
THE SIMULATION OF CONTRAST-ENHANCED LITHOGRAPHY
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LOONG, WA; PAN, HT |
| 國立交通大學 |
2014-12-08T15:05:05Z |
TITANIUM MONONITRIDE AS AN ANTIREFLECTION LAYER ON ALUMINUM METALLIZATION FOR SUBMICRON PHOTOLITHOGRAPHIC PATTERNING
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LOONG, WA; CHIU, KD |
| 國立交通大學 |
2014-12-08T15:04:50Z |
POLY(DIMETHYL-CO-DIPHENYLSILANE) AS A DEEP-UV AND AN OXYGEN PLASMA PORTABLE CONFORMABLE MASK
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LOONG, WA; WANG, TH |
| 國立交通大學 |
2014-12-08T15:04:35Z |
ENHANCED O2 PLASMA STRIPPING OF P+ AND SI+ IMPLANTED NEGATIVE RESIST BY H2 PLASMA PRETREATMENT
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LOONG, WA; YEN, MS; WANG, FC; HSU, BY; LIU, YL |
| 國立交通大學 |
2014-12-08T15:04:14Z |
CROSS SHAPED PATTERN ON CHROME MASK FOR 0.5 MU-M CONTACT HOLE FABRICATION
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LOONG, WA; SHY, SL; GUO, GC; YANG, MT; SU, SY |
| 國立交通大學 |
2014-12-08T15:03:33Z |
0.35-MU-M PATTERN FABRICATION USING QUARTZ-ETCH ATTENUATE PHASE-SHIFTING MASK IN AN I-LINE STEPPER WITH A 0.50-NA AND A 0.60-SIGMA
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LOONG, WA; SHY, SL; LIN, YC |
| 國立交通大學 |
2014-12-08T15:02:59Z |
TiNx as a new embedded material for attenuated phase shift mask
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Loong, WA; Chen, TC; Tseng, JC |
| 國立交通大學 |
2014-12-08T15:02:03Z |
Study on optimization of annular off-axis illumination using Taguchi method for 0.35 mu m dense line/space
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Loong, WA; Tseng, JC; Chen, TC; Lung, CA |
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