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"loong wa"

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Institution Date Title Author
國立交通大學 2014-12-08T15:49:17Z TiSixOy as an absorptive shifter for embedded phase-shifting mask in 248 nm and the modification of R-T method for the determination of shifter's n and k Loong, WA; Chen, CW; Chang, YH; Lin, CM; Cui, Z; Lung, CA
國立交通大學 2014-12-08T15:46:39Z TiSixNy and TiSixOyNz as embedded materials for attenuated phase-shifting mask in 193 nm Lin, CM; Loong, WA
國立交通大學 2014-12-08T15:45:15Z AlSixNy as an embedded layer for attenuated phase-shifting mask in 193 nm and the utilization of a chemically amplified negative resist NEB-22 for maskmaking Loong, WA; Lin, CM
國立交通大學 2014-12-08T15:44:44Z Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R-T method for measuring n and k Lin, CM; Loong, WA
國立交通大學 2014-12-08T15:44:36Z AlSixOy as a high-transmittance embedded material of ternary attenuated phase-shifting mask and correlation between chemical composition and optical properties of AlSixOy in 193 nm lithography Lin, CM; Loong, WA
國立交通大學 2014-12-08T15:43:29Z The simulation of application of high transmittance AttPSM for sub-100 nm pattern in 248 nm lithography Lin, CM; Loong, WA
國立交通大學 2014-12-08T15:43:29Z The correlation between the chemical compositions and optical properties of TiSixNy as an embedded layer for AttPSM in 193 nm Loong, WA; Lin, CM; Tseng, SP; Yeh, WL
國立交通大學 2014-12-08T15:42:22Z Chemical stability of embedded material for attenuated phase-shifting mask and application of high-transmittance attenuated phase-shifting mask for 0.1 mu m contact pattern in 193 nm lithography Lin, CM; Loong, WA
國立交通大學 2014-12-08T15:27:54Z SIMULATION AND FABRICATION OF A NEW PHASE-SHIFTING MASK FOR 0.35 MU-M CONTACT HOLE PATTERN TRANSFER - HALF-TONE-RIM LOONG, WA; SHY, SL; GUO, GC; CHOU, YL
國立交通大學 2014-12-08T15:27:43Z SIMULATION STUDY OF A NEW PHASE-SHIFTING MASK - HALFTONE-RIM LOONG, WA; YEH, CH; SHY, SL

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