|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"lothian jr"
Showing items 11-14 of 14 (1 Page(s) Totally) 1 View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
|
Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
|
Ren, F;Hong, MW;Hobson, WS;Kuo, JM;Lothian, JR;Mannaerts, JP;Kwo, J;Chen, YK;Cho, A'Y; Ren, F; Hong, MW; Hobson, WS; Kuo, JM; Lothian, JR; Mannaerts, JP; Kwo, J; Chen, YK; Cho, A'Y; MINGHWEI HONG |
| 臺大學術典藏 |
1997 |
Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
|
Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG |
| 臺大學術典藏 |
1997 |
Demonstration of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)/InGaAs enhancement-mode n-channel MOSFETs
|
Lothian, JR; Mannaerts, JP; Kwo, J; Chu, SNG; Lin, J; others; MINGHWEI HONG; Tsai, HS; Hobson, WS; Kuo, JM; Hong, M; Ren, F |
Showing items 11-14 of 14 (1 Page(s) Totally) 1 View [10|25|50] records per page
|