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Showing items 1-25 of 34 (2 Page(s) Totally) 1 2 > >> View [10|25|50] records per page
臺大學術典藏 |
2022-03-31T06:38:36Z |
Reduction of worker exposure to solvents by means of an occupational health program: An experience at a synthetic leather factory in Taiwan
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Kuo H.-W.; Lin K.C.; Huang Y.S.; Lou J.C.; TSUN-JEN CHENG; Wu C. |
臺大學術典藏 |
2020-02-25T06:12:25Z |
A study of trihalomethanes formation in a water distribution system
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Lou, J.C.; Chiang, P.C.; PEN-CHI CHIANG |
國立交通大學 |
2019-04-02T06:01:05Z |
Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide
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Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
臺大學術典藏 |
2018-09-10T03:42:32Z |
Reduction of worker exposure to solvents by means of an occupational health program: An experience at a synthetic leather factory in Taiwan
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Kuo, H.-W.;Lin, K.C.;Huang, Y.S.;Lou, J.C.;Cheng, T.J.;Wu, C.; TSUN-JEN CHENG |
國立交通大學 |
2017-04-21T06:48:19Z |
Programming efficiency of stacked-gate flash memories with high-kappa dielectrics
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Chen, Y. Y.; Chien, C. H.; Kin, K. T.; Lou, J. C. |
國立交通大學 |
2017-04-21T06:48:19Z |
Characterization of inter-poly high-kappa dielectrics for next generation stacked-gate flash memories
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Chen, Y. Y.; Li, T. H.; Kin, K. T.; Chien, C. H.; Lou, J. C. |
國立交通大學 |
2014-12-12T01:36:14Z |
整合型溝渠式功率接面場效電晶體與蕭特基阻障二極體
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劉莒光; Liu, Chu-Kuang; 羅正忠; 龔正; Lou, J. C.; Gong, J. |
國立交通大學 |
2014-12-08T15:32:57Z |
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
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Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. |
國立交通大學 |
2014-12-08T15:31:55Z |
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
國立交通大學 |
2014-12-08T15:31:32Z |
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
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Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M. |
國立交通大學 |
2014-12-08T15:31:21Z |
Performance and characteristics of double layer porous silicon oxide resistance random access memory
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M. |
國立交通大學 |
2014-12-08T15:30:43Z |
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
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Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. |
國立交通大學 |
2014-12-08T15:30:41Z |
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
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Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M. |
國立交通大學 |
2014-12-08T15:16:02Z |
Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates
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Chen, Y. Y.; Chien, C. H.; Lou, J. C. |
國立交通大學 |
2014-12-08T15:14:27Z |
Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide
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Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
國立交通大學 |
2014-12-08T15:14:01Z |
Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
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Yang, F. M.; Chang, T. C.; Liu, P. T.; Chen, U. S.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
國立交通大學 |
2014-12-08T15:14:01Z |
Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
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Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Chen, U. S.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
國立交通大學 |
2014-12-08T15:07:43Z |
Novel oxynitride layer applied to flash memory using HfO(2) as charge trapping layer
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Hsieh, C. R.; Lai, C. H.; Lin, B. C.; Lou, J. C.; Lin, J. K.; Lai, Y. L.; Lai, H. L. |
國立交通大學 |
2014-12-08T15:05:12Z |
Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application
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Yang, F. M.; Chang, T. C.; Liu, Po-Tsun; Yeh, Y. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C. |
國立成功大學 |
2014-06-16 |
Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor
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Chen, Hsin-lu; Chang, Ting-Chang; Young, Tai-Fa; Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Huang, Sheng-Yao; Chen, Kai-Huang; Lou, J. C.; Chen, Min-Chen; Shih, Chih-Cheng; Huang, Syuan-Yong; Chen, Jung-Hui |
國立成功大學 |
2013-10-14 |
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
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Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. |
國立成功大學 |
2013-08-19 |
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
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Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
國立成功大學 |
2013-06-24 |
Performance and characteristics of double layer porous silicon oxide resistance random access memory
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Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M. |
國立成功大學 |
2013-05-20 |
The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
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Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M. |
國立成功大學 |
2013-05 |
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
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Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M. |
Showing items 1-25 of 34 (2 Page(s) Totally) 1 2 > >> View [10|25|50] records per page
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