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Showing items 1-34 of 34 (1 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2022-03-31T06:38:36Z	Reduction of worker exposure to solvents by means of an occupational health program: An experience at a synthetic leather factory in Taiwan	Kuo H.-W.; Lin K.C.; Huang Y.S.; Lou J.C.; TSUN-JEN CHENG; Wu C.
臺大學術典藏	2020-02-25T06:12:25Z	A study of trihalomethanes formation in a water distribution system	Lou, J.C.; Chiang, P.C.; PEN-CHI CHIANG
國立交通大學	2019-04-02T06:01:05Z	Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide	Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.
臺大學術典藏	2018-09-10T03:42:32Z	Reduction of worker exposure to solvents by means of an occupational health program: An experience at a synthetic leather factory in Taiwan	Kuo, H.-W.;Lin, K.C.;Huang, Y.S.;Lou, J.C.;Cheng, T.J.;Wu, C.; TSUN-JEN CHENG
國立交通大學	2017-04-21T06:48:19Z	Programming efficiency of stacked-gate flash memories with high-kappa dielectrics	Chen, Y. Y.; Chien, C. H.; Kin, K. T.; Lou, J. C.
國立交通大學	2017-04-21T06:48:19Z	Characterization of inter-poly high-kappa dielectrics for next generation stacked-gate flash memories	Chen, Y. Y.; Li, T. H.; Kin, K. T.; Chien, C. H.; Lou, J. C.
國立交通大學	2014-12-12T01:36:14Z	整合型溝渠式功率接面場效電晶體與蕭特基阻障二極體	劉莒光; Liu, Chu-Kuang; 羅正忠; 龔正; Lou, J. C.; Gong, J.
國立交通大學	2014-12-08T15:32:57Z	Characteristics of hafnium oxide resistance random access memory with different setting compliance current	Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M.
國立交通大學	2014-12-08T15:31:55Z	Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process	Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M.
國立交通大學	2014-12-08T15:31:32Z	The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory	Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M.
國立交通大學	2014-12-08T15:31:21Z	Performance and characteristics of double layer porous silicon oxide resistance random access memory	Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M.
國立交通大學	2014-12-08T15:30:43Z	Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices	Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.
國立交通大學	2014-12-08T15:30:41Z	Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices	Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M.
國立交通大學	2014-12-08T15:16:02Z	Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates	Chen, Y. Y.; Chien, C. H.; Lou, J. C.
國立交通大學	2014-12-08T15:14:27Z	Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide	Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.
國立交通大學	2014-12-08T15:14:01Z	Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application	Yang, F. M.; Chang, T. C.; Liu, P. T.; Chen, U. S.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.
國立交通大學	2014-12-08T15:14:01Z	Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices	Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Chen, U. S.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.
國立交通大學	2014-12-08T15:07:43Z	Novel oxynitride layer applied to flash memory using HfO(2) as charge trapping layer	Hsieh, C. R.; Lai, C. H.; Lin, B. C.; Lou, J. C.; Lin, J. K.; Lai, Y. L.; Lai, H. L.
國立交通大學	2014-12-08T15:05:12Z	Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application	Yang, F. M.; Chang, T. C.; Liu, Po-Tsun; Yeh, Y. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.
國立成功大學	2014-06-16	Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor	Chen, Hsin-lu; Chang, Ting-Chang; Young, Tai-Fa; Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Huang, Sheng-Yao; Chen, Kai-Huang; Lou, J. C.; Chen, Min-Chen; Shih, Chih-Cheng; Huang, Syuan-Yong; Chen, Jung-Hui
國立成功大學	2013-10-14	Characteristics of hafnium oxide resistance random access memory with different setting compliance current	Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M.
國立成功大學	2013-08-19	Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process	Chang, Kuan-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chang, Ting-Chang; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Lou, J. C.; Chu, Tian-Jian; Shih, Chih-Cheng; Pan, Jhih-Hong; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chen, Min-Chen; Wu, Jia-Jie; Hu, Ying; Sze, Simon M.
國立成功大學	2013-06-24	Performance and characteristics of double layer porous silicon oxide resistance random access memory	Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Tseng, Bae-Heng; Shih, Chih-Cheng; Pan, Yin-Chih; Chen, Min-Chen; Pan, Jhih-Hong; Syu, Yong-En; Sze, Simon M.
國立成功大學	2013-05-20	The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory	Huang, Jen-Wei; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Chen, Hsin-Lu; Pan, Yin-Chih; Huang, Xuan; Zhang, Fengyan; Syu, Yong-En; Sze, Simon M.
國立成功大學	2013-05	Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices	Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M.
國立成功大學	2013-04	Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices	Chen, Kai-Huang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, J. C.; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M.
國立臺灣科技大學	2007	Novel oxynitride layer applied to flash memory using HfO2 as charge trapping layer	Hsieh C.R.; Lai C.H.; Lin B.C.; Lou J.C.; Lin J.K.; Lai Y.L.; Lai H.L.
中國醫藥大學	2001	Reduction of worker exposure to solvents using an occupational health program. An experience of a synthetic leather factory in Taiwan.	郭憲文(Hsien-Wen Kuo)*; (Lin K.C); (Huang Y.S); (Lou J.C); (Cheng T.J); (Chang Wu M. J)
臺大學術典藏	1997	Balancing Disinfection Efficiency and THM Formation during Chlorination: Theoretical Considerations	Chiang, P.-C.; Chang, E.E.; Ya-Wen, K.O.; Lou, J.-C.; PEN-CHI CHIANG
國立臺灣大學	1988	Evaluation of the Removal Efficiency of the Trace Organics and Trihalmethanes in the Conventional Treatment Processes	蔣本基; Lou, J. C.; Chiang, Pen-Chi; Lou, J. C.
國立臺灣大學	1987-09	A Predictive Model of THMs Formation in Water Distribution Systems	蔣本基; Lou, J. C.; Chiang, Pen-Chi; Lou, J. C.
國立臺灣大學	1987	Effects of THMs Formation by Changing the Location of Applied Cholrine Dose in the Water Treatment Plant	蔣本基; Lou, J. C.; Chiang, Pen-Chi; Lou, J. C.
臺大學術典藏	1987	Development of a procedure for selecting the optimum adsorbent for abs removal	PEN-CHI CHIANG; Tseng, S.K.; Lou, J.C.; Chiang, P.C.
國立臺灣大學	1985	Modelling THMs Formation in the Chlorine Contact Chamber	蔣本基; Lou, J. C.; Chiang, Pen-Chi; Lou, J. C.

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