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Taiwan Academic Institutional Repository >
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"lou jen chung"
Showing items 26-50 of 50 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:36:21Z |
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
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Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:35:05Z |
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
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Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:34:04Z |
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
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Chang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:34:02Z |
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
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Zhang, Rui; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Chen, Kai-Huang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Huang, Syuan-Yong; Chen, Min-Chen; Shih, Chih-Cheng; Chen, Hsin-Lu; Pan, Jhih-Hong; Tung, Cheng-Wei; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:33:32Z |
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
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Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
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Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
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Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects
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Chou, Cheng-Wei; Wu, Yung-Chun; Wu, Yuan-Chun; Chang, Ting-Chang; Liu, Po-Tsun; Lou, Jen-Chung; Huang, Wen-Jun; Chang, Chun-Yen; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:21:42Z |
Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level
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Hsieh, Chih-Ren; Chen, Yung-Yu; Lin, Wen-Shin; Lin, Gray; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:17:54Z |
Reliability Improvement of HfO(2)/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation Layer
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Hsieh, Chih-Ren; Chen, Yung-Yu; Chung, Jer-Fu; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:13:29Z |
Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
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Chen, Wei-Ren; Chang, Ting-Chang; Liu, Po-Tsun; Yeh, Jui-Lung; Tu, Chun-Hao; Lou, Jen-Chung; Yeh, Ching-Fa; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:11:58Z |
Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
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Hsieh, Chih Ren; Lai, Chiung Hui; Lin, Bo Chun; Zheng, Yuan Kai; Lou, Jen Chung; Lin, Gray |
| 國立交通大學 |
2014-12-08T15:11:31Z |
Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics
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Hsieh, Chih-Ren; Chen, Yung-Yu; Lu, Kwung-Wen; Lin, Gray; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:10:44Z |
UV Illumination Technique for Leakage Current Reduction in a-Si:H Thin-Film Transistors
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Li, Yiming; Hwang, Chih-Hong; Chen, Chung-Le; Yan, Shuoting; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:07:35Z |
Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layer
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Hsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:07:35Z |
Effect of UV illumination on inverted-staggered a-Si : H thin film transistors
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Li, Yiming; Lou, Jen-Chung; Chen, Chung-Le; Hwang, Chih-Hong; Yan, Shuoting |
| 國立交通大學 |
2014-12-08T15:05:33Z |
Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks
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Chen, Shih-Chang; Chen, Yung-Yu; Chang, Yu-Tzu; Lou, Jen-Chung; Kin, Kon-Tsu; Chien, Chao-Hsin |
| 國立交通大學 |
2014-12-08T15:01:25Z |
Impact of Charge Trapping Effect on Negative Bias Temperature Instability in P-MOSFETs with HfO(2)/SiON Gate Stack
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Chen, Shih-Chang; Chien, Chao-Hsin; Lou, Jen-Chung |
| 國立成功大學 |
2014-06 |
Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
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Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2014-02 |
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
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Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. |
| 國立成功大學 |
2013-12-21 |
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
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Zhang, Rui;Tsai, Tsung-Ming;Chang, Ting-Chang;Chang, Kuan-Chang;Chen, Kai-Huang;Lou, Jen-Chung;Young, Tai-Fa;Chen, Jung-Hui;Huang, Syuan-Yong;Chen, Min-Chen;Shih, Chih-Cheng;Chen, Hsin-Lu;Pan, Jhih-Hong;Tung, Cheng-Wei;Syu, Yong-En;Sze, Simon M. |
| 國立成功大學 |
2013-12-11 |
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
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Chang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M. |
| 國立成功大學 |
2013-11-21 |
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
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Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M. |
| 國立成功大學 |
2013-07 |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
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Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 國立成功大學 |
2013-05 |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
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Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
Showing items 26-50 of 50 (1 Page(s) Totally)
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