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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:04:49Z |
THE PROCESS WINDOW OF A-SI/TI BILAYER METALLIZATION FOR AN OXIDATION-RESISTANT AND SELF-ALIGNED TISI2 PROCESS
|
LOU, YS; WU, CY; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:41Z |
A NEW OXIDATION-RESISTANT COSI2 PROCESS FOR SELF-ALIGNED SILICIDATION (SALICIDE) TECHNOLOGY
|
LOU, YS; WU, CY; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:09Z |
A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATION
|
LOU, YS; WU, CY |
| 國立交通大學 |
2014-12-08T15:04:02Z |
A SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS
|
LOU, YS; WU, CY |
| 國立交通大學 |
2014-12-08T15:03:37Z |
THE EFFECTS OF IMPURITY BANDS ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR OHMIC CONTACTS
|
LOU, YS; WU, CY |
| 國立交通大學 |
2014-12-08T15:03:30Z |
LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURE
|
LOU, YS; WU, CY |
Showing items 1-6 of 6 (1 Page(s) Totally)
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