|
English
|
正體中文
|
简体中文
|
0
|
|
???header.visitor??? :
51332279
???header.onlineuser??? :
671
???header.sponsordeclaration???
|
|
|
|
???tair.name??? >
???browser.page.title.author???
|
"lou ys"???jsp.browse.items-by-author.description???
Showing items 1-6 of 6 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:04:49Z |
THE PROCESS WINDOW OF A-SI/TI BILAYER METALLIZATION FOR AN OXIDATION-RESISTANT AND SELF-ALIGNED TISI2 PROCESS
|
LOU, YS; WU, CY; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:41Z |
A NEW OXIDATION-RESISTANT COSI2 PROCESS FOR SELF-ALIGNED SILICIDATION (SALICIDE) TECHNOLOGY
|
LOU, YS; WU, CY; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:09Z |
A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATION
|
LOU, YS; WU, CY |
| 國立交通大學 |
2014-12-08T15:04:02Z |
A SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS
|
LOU, YS; WU, CY |
| 國立交通大學 |
2014-12-08T15:03:37Z |
THE EFFECTS OF IMPURITY BANDS ON THE ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR OHMIC CONTACTS
|
LOU, YS; WU, CY |
| 國立交通大學 |
2014-12-08T15:03:30Z |
LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURE
|
LOU, YS; WU, CY |
Showing items 1-6 of 6 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
