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| 國立臺灣海洋大學 |
2011-02 |
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
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Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui |
| 國立臺灣海洋大學 |
2009-07 |
Comprehensive investigation on planar type of Pd–GaN hydrogen sensors
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CHIU Shao-Yen;HUANG Hsuan-Wei;HUANG Tze-Hsuan;LIANG Kun-Chieh;LIU Kang-Ping;TSAI Jung-Hui;LOUR Wen-Shiung |
| 國立臺灣海洋大學 |
2009-04 |
Comprehensive investigation on planar type of Pd-GaN hydrogen sensors
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Lour, Wen-Shiung; Tsai, Jung-Hu; Liu, Kang-Ping; Liang, Kun-Chieh; Huang, Tze-Hsuan; Huang, Hsuan-Wei; Chiu, Shao-Yen |
| 國立成功大學 |
2009-02 |
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
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Chen, Tzu-Pin; Lee, Chi-Jhung; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2009-01 |
Microwave complementary doped-channel field-effect transistors
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Liu, Wen-Chau; Li, Chien-Ming; Su, Ning-Xing; Wu, Yi-Zhen; Huang, Yin-Shan |
| 國立成功大學 |
2009 |
Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
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Chen, Tzu-Pin; Lee, Chi-Jhung; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Ku, Ghun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2008-12 |
Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor
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Chen, Li-Yang; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2008-01 |
Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)(2)S treatment
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Chiu, Shao-Yen; Chen, Hon-Rung; Chen, Wei-Tien; Hsu, Meng-Kai; Liu, Wen-Chau; Tsai, Jung-Hui; Lour, Wen-Shiung |
| 國立成功大學 |
2007-12 |
Dynamic performance of dual-emitter phototransistor as electro-optical switch
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Chiu, Shao-Yen; Chen, Hon-Rung; Chen, Wei-Tien; Hsu, Meng-Kai; Liu, Wen-Chau; Lour, Wen-Shiung |
| 國立成功大學 |
2007-09 |
Emitter-induced gain effects on dual-emitter phototransistor as an electrooptical switch
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Chen, Wei-Tien; Chen, Hon-Rung; Chiu, Shao-Yen; Hsu, Meng-Kai; Liu, Wen-Chau; Lour, Wen-Shiung |
| 國立成功大學 |
2007-02-01 |
Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors
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Chen, Tzu-Pin; Fu, Ssu-I; Liu, Wen-Chau; Cheng, Shiou-Ying; Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung |
| 國立成功大學 |
2007 |
Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure
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Chen, Tzu-Pin; Fu, Ssu-I; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
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Chen, Tzu-Pin; Fu, Ssu-I; Tsai, Jung-Hui; Lour, Wen-Shiung; Guo, Der-Feng; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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Chen, Chun-Wei; Lai, Po-Hsien; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Guo, Der-Feng; Liu, Wen-Chau |
| 國立臺灣大學 |
2003 |
Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation
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Tsai, Ming-Kwen; Tan, Shih-Wei; Wu, Yen-Wei; Yang, Ying-Jay; Lour, Wen-Shiung |
| 國立臺灣大學 |
2002 |
Effects of wet-oxidation treatment on Al0.45Ga0.55As/GaAs graded-like superlattice-emitter bipolar transistor with low turn-on voltage
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Lour, Wen-Shiung; Wu, Yen-Wei; Tan, Shih-Wei; Tsai, Ming-Kwen; Yang, Ying-Jay |
| 國立成功大學 |
2001-07 |
Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs pseudomorphic high electron mobility transistor
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying |
| 國立成功大學 |
2001-02 |
Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic
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Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2000-01 |
High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-12-01 |
Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Shiou-Ying; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-06 |
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen |
| 國立成功大學 |
1999-04-12 |
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors
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Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou |
Showing items 1-25 of 27 (2 Page(s) Totally)
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