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"lour wen shiung"的相關文件
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| 國立成功大學 |
2001-02 |
Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic
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Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2000-01 |
High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-12-01 |
Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Shiou-Ying; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-06 |
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen |
| 國立成功大學 |
1999-04-12 |
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors
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Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou |
| 國立成功大學 |
1999-04-05 |
Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
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Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Yu, Kuo-Hui; Feng, Shung-Ching; Lour, Wen-Shiung |
| 國立成功大學 |
1999-04 |
On the n(+)-GaAs/delta(p(+))-GaInP/n-GaAs high breakdown voltage field-effect transistor
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Chang, Wen-Lung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Pan, Hsi-Jen; Lour, Wen-Shiung; Liu, Wen-Chau |
顯示項目 21-27 / 27 (共2頁)
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