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"lu chih yuan"
Showing items 26-53 of 53 (2 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:49:32Z |
Reliability Study of MANOS with and without a SiO2 Buffer Layer and BE-MANOS Charge-Trapping NAND Flash Devices
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Liao, Chien-Wei; Lai, Sheng-Chih; Lue, Hang-Ting; Yang, Ming-Jui; Shen, Chin-Yen; Lue, Yi-Hsien; Huang, Yu-Fong; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:25Z |
Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing Algorithm
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Lin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:17Z |
A Study of Blocking and Tunnel Oxide Engineering on Double-Trapping (DT) BE-SONOS Performance
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Lo, Roger; Du, Pei-Ying; Hsu, Tzu-Hsuan; Wu, Chen-Jun; Guo, Jung-Yi; Cheng, Chun-Min; Lue, Hang-Ting; Shih, Yen-Hao; Hou, Tuo-Hung; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:10Z |
Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memory
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Tang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:49:08Z |
A 2-bit/cell, maskless, self-aligned resistance memory with high thermal stability
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He, ChiaHua; Lee, Ming-Daou; Pan, Chen-Ling; Lai, Erb-Kun; Yao, Yeong-Der; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:56Z |
An oxide-buffered BE-MANOS charge-trapping device and the role of Al2O3
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Huang, Yu-Fong; Yang, Ming-Jui; Lue, Yi-Hsien; Wu, Tai-Bor; Hsieh, Jung-Yu; Wang, Szu-Yu; Hong, Shih-Ping; Hsu, Fang-Hao; Shen, Chih-Yen; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuan-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:54Z |
Highly reliable MA BE-SONOS (Metal-Al2O3 bandgap engineered SONOS) using a SiO2 buffer layer
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Lai, Sheng-Chih; Lue, Hang-Ting; Liao, Chien-Wei; Wu, Tai-Bor; Yang, Ming-Jui; Lue, Yi-Hsien; Hsieh, Jung-Yu; Wang, Szu-Yu; Luo, Guang-Li; Chien, Chao-Hsin; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:24Z |
Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory
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Gu, S. H.; Li, C. W.; Wang, Tahui; Lu, W. P.; Chen, K. C.; Ku, Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:16Z |
Investigation of charge loss in cycled NBit cells via field and temperature accelerations
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Tsai, W. J.; Zous, N. K.; Chen, H. Y.; Liu, Lenvis; Yeh, C. C.; Chen, Sam; Lu, W. P.; Wang, Tahui; Ku, Joseph; Lu, Chih-Yuan |
| 中山醫學大學 |
2017 |
大學生壓力程度與食物攝取及睡眠品質相關研究
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魯之媛; Lu, Chih-Yuan |
| 國立交通大學 |
2015-12-02T02:59:28Z |
Ultra-High Bit Density 3D NAND Flash-Featuring-Assisted Gate Operation
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2015-12-02T02:59:12Z |
Impact of V-pass Interference on Charge-Trapping NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2015-07-21T08:28:33Z |
Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory
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Chung, Yueh-Ting; Su, Po-Cheng; Cheng, Yu-Hsuan; Wang, Tahui; Chen, Min-Cheng; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash Memory
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Chou, Y. L.; Chiu, J. P.; Ma, H. C.; Wang, Tahui; Chao, Y. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:36:19Z |
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Shih, Yen-Hao; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:22:37Z |
V-t Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation Effect
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Chung, Yueh-Ting; Huang, Tzu-I; Li, Chi-Wei; Chou, You-Liang; Chiu, Jung-Piao; Wang, Tahui; Lee, M. Y.; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:21:21Z |
Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory
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Chiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory
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Gu, Shaw-Hung; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:14:59Z |
Numerical simulation of bottom oxide thickness effect on charge retention in SONOS flash memory cells
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Gu, Shaw-Hung; Hsu, Chih-Wei; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:13:23Z |
Study of the gate-sensing and channel-sensing transient analysis method for monitoring the charge vertical location of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Lai, Erh-Kun; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:12:03Z |
A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory
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Ma, Huan-Chi; Chou, You-Liang; Chiu, Jung-Piao; Chung, Yueh-Ting; Lin, Tung-Yang; Wang, Tahui; Chao, Yuan-Peng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
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Chou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:11:05Z |
A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part II: Study of the intra-nitride behaviors and reliability of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:10:06Z |
A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport
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Wang, Tahui; Tang, Chun-Jung; Li, C. -W.; Lee, Chih Hsiung; Ou, T. -F; Chang, Yao-Wen; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, K. -C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:09:44Z |
Pulse-IV Characterization of Charge-Transient Behavior of SONOS-Type Devices With or Without a Thin Tunnel Oxide
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiaci-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:08:23Z |
Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell
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Ma, H. C.; Chou, Y. L.; Chiu, J. P.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:07:41Z |
Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
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Lai, Erh-Kun; Chien, Wei-Chih; Chen, Yi-Chou; Hong, Tian-Jue; Lin, Yu-Yu; Chang, Kuo-Pin; Yao, Yeong-Der; Lin, Pang; Horng, Sheng-Fu; Gong, Jeng; Tsai, Shih-Chang; Lee, Ching-Hsiung; Hsieh, Sheng-Hui; Chen, Chun-Fu; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:07:29Z |
Unipolar Switching Behaviors of RTO WO(X) RRAM
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Chien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan |
Showing items 26-53 of 53 (2 Page(s) Totally)
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