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"lu chih yuan"的相关文件
显示项目 36-45 / 53 (共6页)
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| 國立交通大學 |
2015-12-02T02:59:28Z |
Ultra-High Bit Density 3D NAND Flash-Featuring-Assisted Gate Operation
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2015-12-02T02:59:12Z |
Impact of V-pass Interference on Charge-Trapping NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2015-07-21T08:28:33Z |
Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory
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Chung, Yueh-Ting; Su, Po-Cheng; Cheng, Yu-Hsuan; Wang, Tahui; Chen, Min-Cheng; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash Memory
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Chou, Y. L.; Chiu, J. P.; Ma, H. C.; Wang, Tahui; Chao, Y. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:36:19Z |
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
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Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chang, Kuo-Pin; Shih, Yen-Hao; Tsui, Bing-Yue; Hsieh, Kuang-Yeu; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:22:37Z |
V-t Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation Effect
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Chung, Yueh-Ting; Huang, Tzu-I; Li, Chi-Wei; Chou, You-Liang; Chiu, Jung-Piao; Wang, Tahui; Lee, M. Y.; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:21:21Z |
Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory
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Chiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory
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Gu, Shaw-Hung; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:14:59Z |
Numerical simulation of bottom oxide thickness effect on charge retention in SONOS flash memory cells
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Gu, Shaw-Hung; Hsu, Chih-Wei; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:13:23Z |
Study of the gate-sensing and channel-sensing transient analysis method for monitoring the charge vertical location of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Lai, Erh-Kun; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
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