|
"lu chih yuan"的相關文件
顯示項目 11-20 / 53 (共6頁)
<< < 1 2 3 4 5 6 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2019-04-02T06:04:37Z |
Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory
|
Lu, C. C.; Cheng, C. C.; Chiu, H. P.; Lin, W. L.; Chen, T. W.; Ku, S. H.; Tsai, Wen-Jer; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:04:21Z |
Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer Engineering
|
Lin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:59:51Z |
Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
|
Chou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic Computing
|
Lin, Yu-Hsuan; Wang, Chao-Hung; Lee, Ming-Hsiu; Lee, Dai-Ying; Lin, Yu-Yu; Lee, Feng-Min; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:58:56Z |
Unipolar Switching Behaviors of RTO WOX RRAM
|
Chien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:59Z |
A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large Array
|
Lin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:39Z |
Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell String
|
Tsai, Wen-Jer; Lin, W. L.; Cheng, C. C.; Ku, S. H.; Chou, Y. L.; Liu, Lenvis; Hwang, S. W.; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:34Z |
Modeling the Variability Caused by Random Grain Boundary and Trap-location Induced Asymmetrical Read Behavior for a Tight-pitch Vertical Gate 3D NAND Flash Memory Using Double-Gate Thin-Film Transistor (TFT) Device
|
Hsiao, Yi-Hsuan; Lue, Hang-Ting; Chen, Wei-Chen; Chen, Chih-Ping; Chang, Kuo-Ping; Shih, Yen-Hao; Tsui, Bing-Yue; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:54:20Z |
Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method
|
Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:56:17Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
|
Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
顯示項目 11-20 / 53 (共6頁)
<< < 1 2 3 4 5 6 > >>
每頁顯示[10|25|50]項目
|
