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"lu chih yuan"的相關文件
顯示項目 41-53 / 53 (共3頁)
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| 國立交通大學 |
2014-12-08T15:22:37Z |
V-t Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation Effect
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Chung, Yueh-Ting; Huang, Tzu-I; Li, Chi-Wei; Chou, You-Liang; Chiu, Jung-Piao; Wang, Tahui; Lee, M. Y.; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:21:21Z |
Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory
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Chiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory
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Gu, Shaw-Hung; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:14:59Z |
Numerical simulation of bottom oxide thickness effect on charge retention in SONOS flash memory cells
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Gu, Shaw-Hung; Hsu, Chih-Wei; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:13:23Z |
Study of the gate-sensing and channel-sensing transient analysis method for monitoring the charge vertical location of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Lai, Erh-Kun; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:12:03Z |
A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory
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Ma, Huan-Chi; Chou, You-Liang; Chiu, Jung-Piao; Chung, Yueh-Ting; Lin, Tung-Yang; Wang, Tahui; Chao, Yuan-Peng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
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Chou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:11:05Z |
A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part II: Study of the intra-nitride behaviors and reliability of SONOS-type devices
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:10:06Z |
A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport
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Wang, Tahui; Tang, Chun-Jung; Li, C. -W.; Lee, Chih Hsiung; Ou, T. -F; Chang, Yao-Wen; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, K. -C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:09:44Z |
Pulse-IV Characterization of Charge-Transient Behavior of SONOS-Type Devices With or Without a Thin Tunnel Oxide
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Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiaci-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:08:23Z |
Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell
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Ma, H. C.; Chou, Y. L.; Chiu, J. P.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:07:41Z |
Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
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Lai, Erh-Kun; Chien, Wei-Chih; Chen, Yi-Chou; Hong, Tian-Jue; Lin, Yu-Yu; Chang, Kuo-Pin; Yao, Yeong-Der; Lin, Pang; Horng, Sheng-Fu; Gong, Jeng; Tsai, Shih-Chang; Lee, Ching-Hsiung; Hsieh, Sheng-Hui; Chen, Chun-Fu; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:07:29Z |
Unipolar Switching Behaviors of RTO WO(X) RRAM
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Chien, W. C.; Chen, Y. C.; Lai, E. K.; Yao, Y. D.; Lin, P.; Horng, S. F.; Gong, J.; Chou, T. H.; Lin, H. M.; Chang, M. N.; Shih, Y. H.; Hsieh, K. Y.; Liu, R.; Lu, Chih-Yuan |
顯示項目 41-53 / 53 (共3頁)
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