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Showing items 11-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:15:10Z |
Improvement of negative-bias-temperature instability in SiN-capped p-channel metal-oxide-semiconductor field-effect transistors using ultrathin HfO2 buffer layer
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Lu, Ching-Sen; Horng-Chih, Lin; Lee, Yao-Jen |
| 國立交通大學 |
2014-12-08T15:14:29Z |
Impacts of a polycrystalline-silicon buffer layer on the performance and reliability of strained n-channel metal-oxide-semiconductor field-effect transistors with SiN capping
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Lu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lee, Yao-Jen |
| 國立交通大學 |
2014-12-08T15:09:26Z |
Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer
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Lu, Ching-Sen; Lin, Horng-Chih; Lee, Yao-Jen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:33Z |
Optimization of SiN film by varying precursor flow conditions and its impacts on strained channel NMOSFETs
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Lu, Ching-Sen; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:06:23Z |
Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors
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Lu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lu, Chia-Yu; Lee, Yao-Jen; Huang, Tiao-Yuan |
| 國立成功大學 |
2014-10-06 |
Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks
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Tsai, Jyun-Yu; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
Showing items 11-16 of 16 (1 Page(s) Totally)
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