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机构 日期 题名 作者
國立交通大學 2019-04-02T06:04:19Z RF Characteristics of AlGaN/GaN HEMTs under Different Temperatures Chiu, Yu-Sheng; Huang, Jui-Chien; Lin, Tai-Ming; Chou, Yu-Ting; Lu, Chung-Yu; Chang, Chia-Ta; Chang, Edward Yi
國立交通大學 2014-12-16T06:15:27Z GaN HEMT with Nitrogen-Rich Tungsten Nitride Schottky Gate and Method of Forming the Same Chang, Edward Yi; Lu, Chung-Yu
國立交通大學 2014-12-12T01:21:47Z 高頻及高功率應用之氮化鋁鎵/氮化鎵高電子遷移率電晶體之研究 呂宗育; Lu, Chung-Yu; 張翼; Chang, Edward-Yi
國立交通大學 2014-12-08T15:16:09Z Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AIGaN/GaN heterostructures Desmaris, Vincent; Shiu, Jin-Yu; Lu, Chung-Yu; Rorsman, Niklas; Zirath, Herbert; Chang, Edward-Yi
國立交通大學 2014-12-08T15:13:56Z Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs Shiu, Jin-Yu; Huang, Jui-Chien; Desmaris, Vincent; Chang, Chia-Ta; Lu, Chung-Yu; Kumakura, Kazuhide; Makimoto, Toshiki; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi
國立交通大學 2014-12-08T15:12:13Z Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the schottky contacts on AlGaN/GaN heterostructures Lu, Chung-Yu; Chang, Edward Yi; Huang, Jui-Chien; Chang, Chia-Ta; Lin, Mei-Hsuan; Lee, Ching-Tung
國立交通大學 2014-12-08T15:09:52Z Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain Chang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Lu, Chung-Yu; Huang, Jui-Chien; Lee, Ching-Ting
國立交通大學 2014-12-08T15:08:37Z 460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing Chang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Hsiao, Yu-Lin; Huang, Jui-Chien; Lu, Chung-Yu; Chang, Huang-Choung; Cheng, Kai-Wen; Lee, Ching-Ting
國立交通大學 2014-12-08T15:08:27Z WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors Lu, Chung Yu; Hilt, Oliver; Lossy, Richard; Chaturvedi, Nidhi; John, Wilfred; Chang, Edward Yi; Wuerfl, Joachim; Trankle, Gunther
國立交通大學 2014-12-08T15:07:59Z Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications Huang, Jui-Chien; Hsu, Heng-Tung; Chang, Edward-Yi; Lu, Chung-Yu; Chang, Chia-Ta; Kuo, Fang-Yao; Chen, Yi-Chung; Hsu, Ting-Hung

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