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Showing items 36-45 of 237 (24 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:41:55Z |
Highly reliable liquid-phase-deposited SiO2 with nitrous oxide plasma post-treatment for low-temperature-processed polysilicon thin film transistors
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Yeh, CF; Chen, DCH; Lu, CY; Liu, C; Lee, ST; Liu, CH; Chen, TJ |
| 國立交通大學 |
2014-12-08T15:41:22Z |
Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
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Lin, HC; Wang, MF; Lu, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:20Z |
High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
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Lin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:10Z |
A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories
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Yeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY |
| 國立交通大學 |
2014-12-08T15:39:34Z |
Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell
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Tsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:39:14Z |
An endurance evaluation method for flash EEPROM
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Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:53Z |
High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance
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Chang, YH; Lai, FI; Lu, CY; Kuo, HC; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:38:52Z |
Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell
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Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell
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Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
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Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY |
Showing items 36-45 of 237 (24 Page(s) Totally)
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