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机构 日期 题名 作者
國立交通大學 2014-12-08T15:19:29Z A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY
國立交通大學 2014-12-08T15:19:04Z Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC
國立交通大學 2014-12-08T15:18:55Z Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memory Tsai, CW; Lai, SC; Yen, CT; Lien, HM; Lung, HL; Wu, TB; Wang, TH; Liu, R; Lu, CY
國立交通大學 2014-12-08T15:17:37Z Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique Gu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY
國立交通大學 2014-12-08T15:17:35Z Impacts of uniaxial compressive strain on dynamic negative bias temperature instability of p-channel MOSFETs Lu, CY; Lin, HC; Huang, TY
國立交通大學 2014-12-08T15:17:32Z A study of the recirculating flow in planar, symmetrical branching channels Tsui, YY; Lu, CY
國立交通大學 2014-12-08T15:17:01Z A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming Tsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY
國立交通大學 2014-12-08T15:17:01Z Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strain Lu, CY; Lin, HC; Chang, YF; Huang, TY
國立交通大學 2014-12-08T15:06:32Z DIVERGENCE OF THE PARTITION-FUNCTION OF THE ATTRACTIVE FRISCH-LLOYD MODEL OF DISORDERED SYSTEMS LU, CY
國立交通大學 2014-12-08T15:06:30Z LOW-LYING ELECTRONIC TAIL SPECTRUM OF THE ATTRACTIVE DELTA-POTENTIAL RANDOM SYSTEM BY THE PATH INTEGRAL METHOD AND COHERENT STATE REPRESENTATION VARIATIONAL METHOD LU, CY

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