|
"lu d d"的相關文件
顯示項目 1-10 / 22 (共3頁) 1 2 3 > >> 每頁顯示[10|25|50]項目
| 國立成功大學 |
2023 |
HfTaOx Rectifying Layer for HfO x-Based RRAM for High-Accuracy Neuromorphic Computing Applications
|
Chang, T.-J.;Le, H.-H.;Li, C.-Y.;Chu, S.-Y.;Lu, D.D. |
| 國立成功大學 |
2023 |
Computing-in-Memory with Ferroelectric Materials and Beyond
|
Lu, D.D. |
| 國立成功大學 |
2023 |
First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure
|
Yu, X.-R.;Hsieh, C.-C.;Chuang, M.-H.;Chiu, M.-Y.;Sun, T.-C.;Geng, W.-Z.;Chang, W.-H.;Shih, Y.-J.;Lu, W.-H.;Chang, W.-C.;Lin, Y.-C.;Pai, Y.-C.;Lai, C.-Y.;Chuang, M.-H.;Dei, Y.;Yang, C.-Y.;Lu, H.-Y.;Lin, N.-C.;Wu, C.-T.;Kao, Kao K.-H.;Ma, W.C.-Y.;Lu, D.D.;Lee, Y.-J.;Luo, G.-L.;Chiang, M.-H.;Maeda, T.;Wu, Wu W.-F.;Li, Y.-M.;Hou, T.-H. |
| 國立成功大學 |
2022 |
Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications
|
De, S.;Baig, M.A.;Qiu, B.-H.;M�ller, F.;Le, H.-H.;Lederer, M.;K�mpfe, T.;Ali, T.;Sung, P.-J.;Su, C.-J.;Lee, Y.-J.;Lu, D.D. |
| 國立成功大學 |
2022 |
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration with Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
|
Chang, S.-W.;Lu, T.-H.;Yang, C.-Y.;Yeh, C.-J.;Huang, M.-K.;Meng, C.-F.;Chen, P.-J.;Chang, T.-H.;Chang, Y.-S.;Jhu, Jhu J.-W.;Hong, T.-C.;Ke, C.-C.;Yu, X.-R.;Lu, W.-H.;Baig, M.A.;Cho, T.-C.;Sung, P.-J.;Su, C.-J.;Hsueh, F.-K.;Chen, B.-Y.;Hu, Hu H.-H.;Wu, C.-T.;Lin, K.-L.;Ma, W.C.-Y.;Lu, D.D.;Kao, Kao K.-H.;Lee, Y.-J.;Lin, C.-L.;Huang, K.-P.;Chen, K.-M.;Li, Y.;Samukawa, Samukawa S.;Chao, T.-S.;Huang, G.-W.;Wu, Wu W.-F.;Lee, W.-H.;Li, J.-Y.;Shieh, J.-M.;Tarng, J.-H.;Wang, Y.-H.;Yeh, W.-K. |
| 國立成功大學 |
2022 |
First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering
|
Yu, X.-R.;Chang, W.-H.;Hong, T.-C.;Sung, P.-J.;Agarwal, Agarwal A.;Luo, G.-L.;Wu, C.-T.;Kao, Kao K.-H.;Su, C.-J.;Chang, S.-W.;Lu, W.-H.;Fu, P.-Y.;Lin, J.-H.;Wu, P.-H.;Cho, T.-C.;Ma, W.C.-Y.;Lu, D.-D.;Chao, T.-S.;Maeda, T.;Lee, Y.-J.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2022 |
First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes
|
Yang, C.-Y.;Sung, P.-J.;Chuang, M.-H.;Chang, Chang C.-W.;Shih, Y.-J.;Huang, T.-Y.;Lu, D.D.;Hong, T.-C.;Yu, X.-R.;Lu, W.-H.;Chang, S.-W.;Tsai, J.-J.;Huang, M.-K.;Cho, T.-C.;Lee, Y.-J.;Luo, K.-L.;Wu, C.-T.;Su, C.-J.;Kao, Kao K.-H.;Chao, T.-S.;Wu, Wu W.-F.;Wang, Y.-H. |
| 國立成功大學 |
2021 |
A Novel Three-Dimensional 6T-SRAM Cell Featuring Vertical Transistors and 24F2Layout Area
|
Lu, D.D.;Chen, I.-H. |
| 國立成功大學 |
2021 |
Alleviation of charge trapping and flicker noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering
|
De, S.;Bu, W.-X.;Qiu, B.-H.;Su, C.-J.;Lee, Y.-J.;Lu, D.D. |
| 國立成功大學 |
2021 |
Ultra-Low Power Robust 3bit/cell Hf0.5Zr0.5O2 Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology
|
De, S.;Lu, D.D.;Le, H.-H.;Mazumder, S.;Lee, Y.-J.;Tseng, W.-C.;Qiu, B.-H.;Baig, Md.A.;Sung, P.-J.;Su, C.-J.;Wu, C.-T.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
顯示項目 1-10 / 22 (共3頁) 1 2 3 > >> 每頁顯示[10|25|50]項目
|