| 臺大學術典藏 |
2021-10-04T08:24:15Z |
End-of-Life Care in Taiwan: Single-Center Retrospective Study of Modes of Death?
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Wu E.-T.; Wang C.-C.; Huang S.-C.; Chen C.-H.; Jou S.-T.; Chen Y.-C.; MEI-HWAN WU; Lu F.L. |
| 臺大學術典藏 |
2021-09-17T05:41:02Z |
Aortic valve prolapse associated with outlet-type ventricular septal defect
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SHUENN-NAN CHIU; Wang J.-K.; Lin M.-T.; Wu E.-T.; Lu F.L.; Chang C.-I.; Chen Y.-S.; Chiu I.-S.; Lue H.-C.; Wu M.-H. |
| 臺大學術典藏 |
2021-09-17T05:41:01Z |
Ventricular septal defect with secondary left ventricular-to-right atrial shunt is associated with a higher risk for infective endocarditis and a lower late chance of closure
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Wu M.-H.; Wang J.-K.; Lin M.-T.; Wu E.-T.; Lu F.L.; SHUENN-NAN CHIU; Lue H.-C. |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch
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Tu C.-T;Huang Y.-S;Cheng C.-Y;Tsai C.-E;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:01Z |
Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process
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Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Record Low Contact Resistivity to Ge:B (8.1*10-10Omega-cm-2) and GeSn:B (4.1*10-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping
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Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:04:00Z |
Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure
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Liu X;Lu T.-M;Harris C.T;Lu F.-L;Liu C.-Y;Li J.-Y;Liu C.W;Du R.-R.; Liu X; Lu T.-M; Harris C.T; Lu F.-L; Liu C.-Y; Li J.-Y; Liu C.W; Du R.-R.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:59Z |
Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
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Huang Y.-S;Huang C.-H;Lu F.-L;Lin C.-Y;Ye H.-Y;Wong I.-H;Jan S.-R;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:59Z |
Process simulation of pulsed laser annealing on epitaxial Ge on Si
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Lu C.-T;Lu F.-L;Tsai C.-E;Huang W.-H;Liu C.W.; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels
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Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise
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Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching
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Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V
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Tu C.-T;Huang Y.-S;Lu F.-L;Liu H.-H;Lin C.-Y;Liu Y.-C;Liu C.W.; Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08
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Galluccio E;Petkov N;Mirabelli G;Doherty J;Lin S.-Y;Lu F.-L;Liu C.W;Holmes J.D;Duffy R.; Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels
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Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping
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Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors
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Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications
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Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well
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Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition
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Tsai C.-E;Lu F.-L;Chen P.-S;Liu C.W.; Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-08-12T03:46:27Z |
Body mass index may modify asthma prevalence among low-birth-weight children
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Lu F.L.; Hsieh C.-J.; Caffrey J.L.; Lin M.-H.; Lin Y.-S.; CHINGCHUN LIN; Tsai M.-S.; Ho W.-C.; Chen P.-C.; Sung F.-C.; Lin R.-S. |
| 臺大學術典藏 |
2021-08-12T03:46:20Z |
Childhood exposure to phthalates and pulmonary function
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Lin L.-Y.; Tsai M.-S.; Chen M.-H.; Ng S.; Hsieh C.-J.; CHINGCHUN LIN; Lu F.L.; Hsieh W.-S.; Chen P.-C. |
| 臺大學術典藏 |
2021-07-02T03:42:40Z |
Longitudinal follow-up of lymphocyte subsets during the first year of life
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Tsao P.-N.; BOR-LUEN CHIANG; Yang Y.-H.; Tsai M.-J.; Lu F.L.; Chou H.-C.; Tsou K.-I. |
| 臺大學術典藏 |
2021-07-02T03:41:59Z |
Recommendations for the Management of Children With H1N1 Novel Influenza Infection
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Lee P.-I.; Lin T.-Y.; Hsieh K.-S.; Shyur S.-D.; Hsia S.-H.; Huang Y.-F.; Lu F.L.; Hwang B.; Chiu N.-C.; Lu C.-Y.; Chi C.-S.; Chen P.-Y.; Chang L.-Y.; Chen J.-M.; BOR-LUEN CHIANG; Huang Y.-C.; Lee C.-Y. |
| 臺大學術典藏 |
2021-06-24T07:19:54Z |
Streptococcal toxic shock syndrome manifesting as peritonitis in a child
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Liang T.-C.; Lu C.-Y.; Lu F.L.; Lee P.-I.; LI-MIN HUANG |
