臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 16-25 of 178 (18 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2021-10-04T08:24:15Z	End-of-Life Care in Taiwan: Single-Center Retrospective Study of Modes of Death?	Wu E.-T.; Wang C.-C.; Huang S.-C.; Chen C.-H.; Jou S.-T.; Chen Y.-C.; MEI-HWAN WU; Lu F.L.
臺大學術典藏	2021-09-17T05:41:02Z	Aortic valve prolapse associated with outlet-type ventricular septal defect	SHUENN-NAN CHIU; Wang J.-K.; Lin M.-T.; Wu E.-T.; Lu F.L.; Chang C.-I.; Chen Y.-S.; Chiu I.-S.; Lue H.-C.; Wu M.-H.
臺大學術典藏	2021-09-17T05:41:01Z	Ventricular septal defect with secondary left ventricular-to-right atrial shunt is associated with a higher risk for infective endocarditis and a lower late chance of closure	Wu M.-H.; Wang J.-K.; Lin M.-T.; Wu E.-T.; Lu F.L.; SHUENN-NAN CHIU; Lue H.-C.
臺大學術典藏	2021-09-02T00:04:01Z	Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch	Tu C.-T;Huang Y.-S;Cheng C.-Y;Tsai C.-E;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:01Z	Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process	Huang Y.-S;Lu F.-L;Tsou Y.-J;Ye H.-Y;Lin S.-Y;Huang W.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Record Low Contact Resistivity to Ge:B (8.110-10Omega-cm-2) and GeSn:B (4.110-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping	Lu F.-L;Liu Y.-C;Tsai C.-E;Ye H.-Y;Liu C.W.; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:04:00Z	Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure	Liu X;Lu T.-M;Harris C.T;Lu F.-L;Liu C.-Y;Li J.-Y;Liu C.W;Du R.-R.; Liu X; Lu T.-M; Harris C.T; Lu F.-L; Liu C.-Y; Li J.-Y; Liu C.W; Du R.-R.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:59Z	Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs	Huang Y.-S;Huang C.-H;Lu F.-L;Lin C.-Y;Ye H.-Y;Wong I.-H;Jan S.-R;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al.
臺大學術典藏	2021-09-02T00:03:59Z	Process simulation of pulsed laser annealing on epitaxial Ge on Si	Lu C.-T;Lu F.-L;Tsai C.-E;Huang W.-H;Liu C.W.; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; Liu C.W.; CHEE-WEE LIU
臺大學術典藏	2021-09-02T00:03:58Z	Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels	Liu Y.-C;Huang Y.-S;Lu F.-L;Ye H.-Y;Tu C.-T;Liu C.W.; Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; Liu C.W.; CHEE-WEE LIU

Showing items 16-25 of 178 (18 Page(s) Totally)
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