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Showing items 26-35 of 178 (18 Page(s) Totally)
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| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise
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Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching
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Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V
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Tu C.-T;Huang Y.-S;Lu F.-L;Liu H.-H;Lin C.-Y;Liu Y.-C;Liu C.W.; Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08
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Galluccio E;Petkov N;Mirabelli G;Doherty J;Lin S.-Y;Lu F.-L;Liu C.W;Holmes J.D;Duffy R.; Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels
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Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping
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Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors
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Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications
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Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well
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Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition
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Tsai C.-E;Lu F.-L;Chen P.-S;Liu C.W.; Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU |
Showing items 26-35 of 178 (18 Page(s) Totally)
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