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Institution Date Title Author
國立交通大學 2019-04-02T06:01:08Z Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH3 plasma treatment on buffer layer Lu, Hau-Yan; Chang, Ting-Chang; Liu, Po-Tsun; Li, Hung-Wei; Hu, Chin-Wei; Lin, Kun-Chin; Wang, Chao-Chun; Tai, Ya-Hsiang; Chi, Sien
國立交通大學 2014-12-08T15:24:58Z A novel threshold voltage compensation pixel circuit with high immunity to the supply voltage drop for AMOLED displays Lu, Hau-Yan; Liu, Po-Tsun; Chang, Ting-Chang; Chi, Sien
國立交通大學 2014-12-08T15:15:52Z Enhancement of brightness uniformity by a new voltage-modulated pixel design for AMOLED displays Lu, Hau-Yan; Liu, Po-Tsun; Chang, Ting- Chang; Chi, Sien
國立交通大學 2014-12-08T15:13:02Z A new pixel circuit compensating for brightness variation in lagre size and high resolution AMOLED displays Lu, Hau-Yan; Chang, Ting-Chang; Tai, Ya-Hsing; Liu, Po-Tsun; Chi, Sien
國立交通大學 2014-12-08T15:12:56Z Elimination of photoleakage current in poly-Si TFTs using a metal-shielding structure Lu, Hau-Yan; Chang, Ting-Chang; Liu, Po-Tsun; Li, Hung-Wei; Hu, Chin-Wei; Lin, Kun-Chih; Tai, Ya-Hsiang; Chi, Sien
國立交通大學 2014-12-08T15:12:18Z Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH(3) plasma treatment on buffer layer Lu, Hau-Yan; Chang, Ting-Chang; Liu, Po-Tsun; Li, Hung-Wei; Hu, Chin-Wei; Lin, Kun-Chin; Wang, Chao-Chun; Tai, Ya-Hsiang; Chi, Sien
國立交通大學 2014-12-08T15:12:01Z Study on degradation of crystallized laterally grown poly-Si TFT under Dynamic Stress Lu, Hau-Yan; Chung, Wan-Fang; Tseng, Tzu-Yi; Chen, Yu-Cheng; Liu, Po-Tsun; Chang, Ting-Chang; Chi, Sien
國立交通大學 2014-12-08T15:11:22Z Electrical degradation of N-channel poly-Si TFT under AC stress by C-V measurement Lu, Hau-Yan; Liu, Po-Tsun; Chang, Ting-Chang; Chi, Sein
國立交通大學 2014-12-08T15:07:13Z A novel a-Si TFT pixel circuit with high immunity to the degradation of the TFTs and OLEDs used in AMOLED displays Lu, Hau-Yan; Liu, Po-Tsun; Hu, Chin-Wei; Chang, Ting-Chang; Chi, Sien
國立交通大學 2014-12-08T15:06:31Z Layout dependence on threshold voltage instability of hydrogenated amorphous silicon thin film transistors Tseng, Huai-Yuan; Chiang, Ko-Yu; Lu, Hau-Yan; Kung, Chen-Pang; Chang, Ting-Chang

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