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Taiwan Academic Institutional Repository >
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"lu shey shi"
Showing items 106-115 of 137 (14 Page(s) Totally)
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| 國立臺灣大學 |
2001-02 |
A Novel Interpretation of Transistor -Parameters by Poles and Zeros for RF IC Circuit Design
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Lu, Shey-Shi; Meng, Chin-Chun; Chen, To-Wei; Chen, Hsiao-Chin |
| 國立臺灣大學 |
2001 |
A process for the formation of submicron V-gate by micromachinedV-grooves using GaInP/GaAs selective etching technique
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Chiu, Hong-Wei; Ho, Nien-Show; Lu, Shey-Shi |
| 國立臺灣大學 |
2001 |
A novel interpretation of Transducer Power Gain by Optical Analogy
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Pan, Hsuan-Yu; Tu, Hsing-Yuan; Lu, Shey-Shi; Meng, C. C. |
| 國立臺灣大學 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
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Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
| 國立臺灣大學 |
1999-01 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
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Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
| 國立臺灣大學 |
1999 |
Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As insulated-gate FETs forpower application
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Lu, Shey-Shi; Hsu, Yao-Wen; Meng, Chin-Chun; Chen, Liang-Po |
| 國立臺灣大學 |
1999 |
The effect of gate recess profile on device performance ofGa0.51In0.49P/In0.2Ga0.8Asdoped-channel FET's
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Lu, Shey-Shi; Meng, Chin-Chun; Lin, Yo-Sheng; Lan, Hai |
| 國立臺灣大學 |
1999 |
Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
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Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
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Lan-Hai;Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen; Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
Showing items 106-115 of 137 (14 Page(s) Totally)
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