| 國立臺灣大學 |
2003-02-15 |
Executive Summary of Advanced Technologies for Telecommunications (B)
|
Chen, Chun-Hsiung; Hsu, Powen; Wu, Ruey-Beei; Chu, Tah-Hsiung; Wang, Huei; Lu, Shey-Shi; Meng, Chin-Chun |
| 國立臺灣大學 |
2003 |
A SiGe low noise amplifier for 2.4/5.2/5.7 GHz WLAN applications
|
Lee, Po-Wei; Chiu, Hung-Wei; Hsieh, Tien-Ling; Shen, Chih-Hsien; Huang, Guo-Wei; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
DC-2.1 GHz CMOS Multiple Feedback Transimpedance Amplifiers with High Dynamic Range and Linearity
|
Chiang, Ming-Chou; Chen, Ping-Yu; Lu, Shey-Shi; Meng, Chin-Chun |
| 國立臺灣大學 |
2003 |
Theoretical analysis of the anomalous dips of scattering parameter S22 in deep sub-micrometer MOSFETs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
An Analysis of Small-Signal Gate-Drain Resistance Effect on RF Power MOSFETs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
An analysis of the kink phenomenon of scattering parameter S22 in RF power mosfets for system-on-chip (SOC) applications
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs
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Tu, Hsing-Yuan; Chou, Tao-Hsuan; Lin, Yo-Sheng; Chiu, Hsien-Chin; Chen, Ping-Yu; Wu, Wen-Chung; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
An Analysis of Small-Signal Substrate Resistance Effect in Deep-Submicrometer RF MOSFETs
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
Lin, Yo-Sheng; Chen, Chih-Chen; Lu, Shey-Shi |
| 國立臺灣大學 |
2003 |
Single-voltage-supply operation of Ga0.51In0.49P/AlGaAS/IN0.15Ga0.85As PHEMTS with high-power density
|
Tu, Hsing-Yuan; Pan, Hsuan-Yu; Lu, Shey-Shi |
| 國立臺灣大學 |
2002-10 |
An Analysis of the Anomalous Dip in Scattering Parameter of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs)
|
Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu |
| 國立臺灣大學 |
2002-08 |
Wideband impedance matched GaInP/GaAs HBT Gilbert micromixer with 12 dB gain
|
Wang, Cheng-Yu; Lu, Shey-shi; Meng, C.C. |
| 國立臺灣大學 |
2002-08 |
Analysis and design of CMOS broadband amplifier with dual feedback loops
|
Chen, Yu-Chang; Lu, Shey-Shi |
| 國立臺灣大學 |
2002-06 |
A 2.17 dB NF, 5 GHz band monolithic CMOS LNA with 10 mW DC power consumption
|
Chiu, Hong-Wei; Lu, Shey-Shi |
| 國立臺灣大學 |
2002 |
A 2.17 dB NF, 5 GHz Band Monolithic CMOS LNA with 10 mW DC Power Consumption
|
Chiu, Hong-Wei; Lu, Shey-Shi |
| 國立臺灣大學 |
2002 |
Analysis, design, and optimization of InGaP-GaAs HBTmatched-impedance wide-band amplifiers with multiple feedback loops
|
Chiang, Ming-Chou; Lu, Shey-Shi; Meng, Chin-Chun; Yu, Shih-An; Yang, Shih-Cheng; Chan, Yi-Jen |
| 國立臺灣大學 |
2002 |
A 5.7 GHz interpolative VCO using InGaP/GaAs HBT technology
|
Yu, Shih-An; Meng, Chin-Chun; Lu, Shey-Shi |
| 國立臺灣大學 |
2002 |
A Simple Method for the Determination of Noise Coefficients P, R, and C by Two Port Noise Parameters
|
Chen, Ping-Yu; Lu, Shey-Shi; Wang, Huei |
| 國立臺灣大學 |
2002 |
An Analysis of the Anomalous Dip in Scattering Parameter S22 of InGaP–GaAs Heterojunction Bipolar Transistors (HBTs)
|
Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi; Pan, Hsuan-Yu |
| 國立臺灣大學 |
2001-12 |
Quality factor improvement of on-chip inductors for HIPERLAN RFIC by micromachining
|
Chiu, Hong-Wei; Chen, Hsiao-Chin; Lu, Shey-shi |
| 國立臺灣大學 |
2001-02 |
A Novel Interpretation of Transistor -Parameters by Poles and Zeros for RF IC Circuit Design
|
Lu, Shey-Shi; Meng, Chin-Chun; Chen, To-Wei; Chen, Hsiao-Chin |
| 國立臺灣大學 |
2001 |
A process for the formation of submicron V-gate by micromachinedV-grooves using GaInP/GaAs selective etching technique
|
Chiu, Hong-Wei; Ho, Nien-Show; Lu, Shey-Shi |
| 國立臺灣大學 |
2001 |
A novel interpretation of Transducer Power Gain by Optical Analogy
|
Pan, Hsuan-Yu; Tu, Hsing-Yuan; Lu, Shey-Shi; Meng, C. C. |
| 國立臺灣大學 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
