| 國立臺灣大學 |
2001-02 |
A Novel Interpretation of Transistor -Parameters by Poles and Zeros for RF IC Circuit Design
|
Lu, Shey-Shi; Meng, Chin-Chun; Chen, To-Wei; Chen, Hsiao-Chin |
| 國立臺灣大學 |
2001 |
A process for the formation of submicron V-gate by micromachinedV-grooves using GaInP/GaAs selective etching technique
|
Chiu, Hong-Wei; Ho, Nien-Show; Lu, Shey-Shi |
| 國立臺灣大學 |
2001 |
A novel interpretation of Transducer Power Gain by Optical Analogy
|
Pan, Hsuan-Yu; Tu, Hsing-Yuan; Lu, Shey-Shi; Meng, C. C. |
| 國立臺灣大學 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
| 國立臺灣大學 |
1999-01 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
|
Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
| 國立臺灣大學 |
1999 |
Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As insulated-gate FETs forpower application
|
Lu, Shey-Shi; Hsu, Yao-Wen; Meng, Chin-Chun; Chen, Liang-Po |
| 國立臺灣大學 |
1999 |
The effect of gate recess profile on device performance ofGa0.51In0.49P/In0.2Ga0.8Asdoped-channel FET's
|
Lu, Shey-Shi; Meng, Chin-Chun; Lin, Yo-Sheng; Lan, Hai |
| 國立臺灣大學 |
1999 |
Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
1999 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
|
Lan-Hai;Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen; Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
| 國立臺灣大學 |
1997-06 |
Fabrication and simulation of Ga0.51In0.49P/InxGa1-xAs doped-channel FETs and MMIC amplifiers grown by GSMBE
|
Lu, Shey-Shi; Lin, Yo-Sheng |
| 國立臺灣大學 |
1997-05 |
High-power high-speed Ga0.51In0.49P/InxGa1-xAs doped-channel FET's
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1997 |
Ga0.51In0.49P/In0.15Ga0.85 As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
|
Lin, Yo-Sheng; Sun, Tai-Ping; Lu, Shey-Shi |
| 國立臺灣大學 |
1997 |
High-performance Ga0.51In0.49P/GaAs airbridgegate MISFET's grown by gas-source MBE
|
Lin, Yo-Sheng; Lu, Shey-Shi; Wang, Yo-Jen |
| 國立臺灣大學 |
1996-11 |
Fabrication and simulation of high-power high-speed Ga0.51In0.49P/GaAs airbridge gate MISFET's grown by GSMBE
|
Lin, Yo-Sheng; Wang, Yo-Jen; Lu, Shey-Shi; Meng, Charles Chin-Chun |
| 國立臺灣大學 |
1996-10 |
The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1996 |
High-breakdown-voltage Ga0.51In0.49P channel MESFET's grown by GSMBE
|
Lin, Yo-Sheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1996 |
複合式半導體微型壓力感測計之研究(總計畫)
|
呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen |
| 國立臺灣大學 |
1995-11 |
A Wide-G Range Silicon Piezoresistive Accelerometer
|
Hsu, Yu-Wen; Lu, Shey-Shi; Yang, Lung-Jieh; Chang, Pei-Zen |
| 國立臺灣大學 |
1995-10 |
High-linearity high current drivability GaInP/GaAs MISFET using GaInP airbridge gate structure grown by GSMBE
|
Lu, Shey-Shi; Lin, Yo-Shen |
| 臺大學術典藏 |
1995 |
A Wide-G Range Silicon Piezoresistive Accelerometer
|
Yang, Lung-Jieh;Hsu, Yu-Wen;Lu, Shey-Shi;Chang, Pei-Zen; Hsu, Yu-Wen; Lu, Shey-Shi; Yang, Lung-Jieh; Chang, Pei-Zen |
| 國立臺灣大學 |
1994 |
應變感應二維電子氣場效電晶體
|
呂學士; Lu, Shey-Shi |
| 國立臺灣大學 |
1994 |
三五族半導體微型加速度計之研究
|
呂學士; Lu, Shey-Shi |
| 國立臺灣大學 |
1993 |
半導體微型加速度計之研究
|
呂學士; Lu, Shey-Shi |
| 國立臺灣大學 |
1993 |
High-Performance In0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistors
|
Wu, Chung-Cheng; Lu, Shey-Shi |
| 國立臺灣大學 |
1992 |
High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy
|
Wu, Chung Cheng; 呂學士; 李嗣涔; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I. |
| 國立臺灣大學 |
1992 |
High-current-gain small-offset-voltage In0.49Ga0.51P/GaAs tunneling emitter bipolar transistors grown by gas sourcemolecular beam epitaxy
|
Lu, Shey-Shi; Wu, Chung-Cheng |
| 臺大學術典藏 |
1992 |
High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy
|
Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; 呂學士; 李嗣涔; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I. |
| 國立臺灣大學 |
1989-06 |
Experiments on the Position Control of a One-Link Flexible Robot Arm
|
Wang, W. J.; 呂學士; 許振發; Wang, W. J.; Lu, Shey-Shi; Hsu, Chen-Fa |
| 國立臺灣大學 |
1989-05 |
A Position Controller of a One-Link Flexible Robot Arm
|
Wang, W. J.; 許振發; 呂學士; Wang, W. J.; Hsu, Chen-Fa; Lu, Shey-Shi |
| 國立臺灣大學 |
1987-07 |
Output Feedback Control with Optimal Gains for a One-Link Flexible Robot Arm
|
Wang, W. J.; 許振發; 呂學士; Wang, W. J.; Hsu, Chen-Fa; Lu, Shey-Shi |
| 國立臺灣大學 |
1986-12 |
Output Feedback Control of a Flexible Robot Arm
|
Wang, W. J.; 呂學士; 許振發; Wang, W. J.; Lu, Shey-Shi; Hsu, Chen-Fa |
