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Showing items 111-135 of 137  (6 Page(s) Totally)
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Institution Date Title Author
國立臺灣大學 1999-01 S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen
國立臺灣大學 1999 Single-voltage-supply operation of Ga0.51In0.49P/In0.15Ga0.85As insulated-gate FETs forpower application Lu, Shey-Shi; Hsu, Yao-Wen; Meng, Chin-Chun; Chen, Liang-Po
國立臺灣大學 1999 The effect of gate recess profile on device performance ofGa0.51In0.49P/In0.2Ga0.8Asdoped-channel FET's Lu, Shey-Shi; Meng, Chin-Chun; Lin, Yo-Sheng; Lan, Hai
國立臺灣大學 1999 Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen
臺大學術典藏 1999 S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices Lan-Hai;Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen; Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen
國立臺灣大學 1997-06 Fabrication and simulation of Ga0.51In0.49P/InxGa1-xAs doped-channel FETs and MMIC amplifiers grown by GSMBE Lu, Shey-Shi; Lin, Yo-Sheng
國立臺灣大學 1997-05 High-power high-speed Ga0.51In0.49P/InxGa1-xAs doped-channel FET's Lin, Yo-Sheng; Lu, Shey-Shi
國立臺灣大學 1997 Ga0.51In0.49P/In0.15Ga0.85 As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage Lin, Yo-Sheng; Sun, Tai-Ping; Lu, Shey-Shi
國立臺灣大學 1997 High-performance Ga0.51In0.49P/GaAs airbridgegate MISFET's grown by gas-source MBE Lin, Yo-Sheng; Lu, Shey-Shi; Wang, Yo-Jen
國立臺灣大學 1996-11 Fabrication and simulation of high-power high-speed Ga0.51In0.49P/GaAs airbridge gate MISFET's grown by GSMBE Lin, Yo-Sheng; Wang, Yo-Jen; Lu, Shey-Shi; Meng, Charles Chin-Chun
國立臺灣大學 1996-10 The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE Lin, Yo-Sheng; Lu, Shey-Shi
國立臺灣大學 1996 High-breakdown-voltage Ga0.51In0.49P channel MESFET's grown by GSMBE Lin, Yo-Sheng; Lu, Shey-Shi
國立臺灣大學 1996 複合式半導體微型壓力感測計之研究(總計畫) 呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen
國立臺灣大學 1995-11 A Wide-G Range Silicon Piezoresistive Accelerometer Hsu, Yu-Wen; Lu, Shey-Shi; Yang, Lung-Jieh; Chang, Pei-Zen
國立臺灣大學 1995-10 High-linearity high current drivability GaInP/GaAs MISFET using GaInP airbridge gate structure grown by GSMBE Lu, Shey-Shi; Lin, Yo-Shen
臺大學術典藏 1995 A Wide-G Range Silicon Piezoresistive Accelerometer Yang, Lung-Jieh;Hsu, Yu-Wen;Lu, Shey-Shi;Chang, Pei-Zen; Hsu, Yu-Wen; Lu, Shey-Shi; Yang, Lung-Jieh; Chang, Pei-Zen
國立臺灣大學 1994 應變感應二維電子氣場效電晶體 呂學士; Lu, Shey-Shi
國立臺灣大學 1994 三五族半導體微型加速度計之研究 呂學士; Lu, Shey-Shi
國立臺灣大學 1993 半導體微型加速度計之研究 呂學士; Lu, Shey-Shi
國立臺灣大學 1993 High-Performance In0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistors Wu, Chung-Cheng; Lu, Shey-Shi
國立臺灣大學 1992 High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy Wu, Chung Cheng; 呂學士; 李嗣涔; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I.
國立臺灣大學 1992 High-current-gain small-offset-voltage In0.49Ga0.51P/GaAs tunneling emitter bipolar transistors grown by gas sourcemolecular beam epitaxy Lu, Shey-Shi; Wu, Chung-Cheng
臺大學術典藏 1992 High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; 呂學士; 李嗣涔; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi; Lee, Si-Chen; Williamson, F.; Nathan, M. I.
國立臺灣大學 1989-06 Experiments on the Position Control of a One-Link Flexible Robot Arm Wang, W. J.; 呂學士; 許振發; Wang, W. J.; Lu, Shey-Shi; Hsu, Chen-Fa
國立臺灣大學 1989-05 A Position Controller of a One-Link Flexible Robot Arm Wang, W. J.; 許振發; 呂學士; Wang, W. J.; Hsu, Chen-Fa; Lu, Shey-Shi

Showing items 111-135 of 137  (6 Page(s) Totally)
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