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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2018-09-10T06:56:00Z Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling Chiu, CH; Wu, YR; Yen, HH; Chen, JR; Kao, CC; Yang, HW; Kuo, HC; Lu, TC; Yeh, WY; Wang, SC; Yu, PC; YUH-RENN WUet al.
臺北醫學大學 2015 Comparison of total hip and knee joint replacement in patients with rheumatoid arthritis and osteoarthritis: a?nationwide, population-based study Liao, CY;Chan, HT;Chao, E;Yang, CM;Lu, TC
國立交通大學 2014-12-08T15:44:12Z Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers Lu, TC; Fu, R; Shieh, HM; Huang, KJ; Wang, SC
國立交通大學 2014-12-08T15:42:38Z Real index-guided InGaAlP red lasers with buried tunnel junctions Lu, TC; Shieh, HM; Wang, SC
國立交通大學 2014-12-08T15:41:10Z A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memories Yeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY
國立交通大學 2014-12-08T15:41:09Z InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition Lu, TC; Tsai, JY; Chu, JT; Chang, YS; Wang, SC
國立交通大學 2014-12-08T15:40:15Z High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap Tsai, JY; Lu, TC; Wang, SC
國立交通大學 2014-12-08T15:39:44Z MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC
國立交通大學 2014-12-08T15:39:35Z Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition Lu, TC; Tsai, JY; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:39:14Z An endurance evaluation method for flash EEPROM Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY
國立交通大學 2014-12-08T15:38:52Z Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:38:37Z A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:38:37Z Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:37:11Z Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers Lu, TC; Hsu, WC; Chang, YS; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:26:06Z Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers Lu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC
國立交通大學 2014-12-08T15:25:47Z Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique Gu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:25:39Z Optically pumped GaN-based vertical cavity surface emitting laser at room temperature Chu, JT; Liang, WD; Kao, CC; Huang, HW; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:39Z An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:37Z A novel fully CMOS process compatible PREM for SOC applications Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY
國立交通大學 2014-12-08T15:19:29Z A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY
國立交通大學 2014-12-08T15:18:37Z Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF
國立交通大學 2014-12-08T15:18:32Z Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC
國立交通大學 2014-12-08T15:18:06Z Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off Chu, JT; Kao, CC; Huang, HW; Liang, WD; Chu, CF; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:17:32Z Quaternary AlInGaN multiple quantum well 368 nm light-emitting diode Wang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J
國立交通大學 2014-12-08T15:17:29Z AlGaInP light-emitting diodes with stripe patterned omni-directional reflector Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ

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