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Showing items 1-12 of 12 (1 Page(s) Totally)
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| 國立交通大學 |
2019-08-02T02:24:17Z |
Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash Memory
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Lin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:04:53Z |
Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory
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Ku, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:59:51Z |
Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
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Chou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 臺大學術典藏 |
2018-09-10T06:31:04Z |
A new interference phenomenon in sub-60nm nitride-based flash memory
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Wu, G.W.; Chen, P.C.; Chen, C.H.; Yang, I.C.; Chin, C.Y.; Huang, I.J.; Tsai, W.J.; Lu, T.C.; Lu, W.P.; Chen, K.C.; Lu, C.Y.; Chang, Y.W.; YAO-WEN CHANG et al. |
| 國立交通大學 |
2017-04-21T06:49:40Z |
Cell Endurance Prediction from a Large-area SONOS Capacitor
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Lee, C. H.; Tu, W. H.; Gu, S. H.; Wu, C. W.; Lin, S. W.; Yeh, T. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Overall Operation Considerations for a SONOS-based Memory
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Lee, C. H.; Tu, W. H.; Chong, L. H.; Gu, S. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y. |
| 國立交通大學 |
2017-04-21T06:49:10Z |
Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memory
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Tang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:24Z |
Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory
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Gu, S. H.; Li, C. W.; Wang, Tahui; Lu, W. P.; Chen, K. C.; Ku, Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:16Z |
Investigation of charge loss in cycled NBit cells via field and temperature accelerations
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Tsai, W. J.; Zous, N. K.; Chen, H. Y.; Liu, Lenvis; Yeh, C. C.; Chen, Sam; Lu, W. P.; Wang, Tahui; Ku, Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:21:21Z |
Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory
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Chiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
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Chou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:08:23Z |
Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell
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Ma, H. C.; Chou, Y. L.; Chiu, J. P.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
Showing items 1-12 of 12 (1 Page(s) Totally)
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