| 國立成功大學 |
2000-04 |
Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode
|
Su, Yan-Kuin; Chang, Jia-Rong; Lu, Yan-Ten; Lin, Chuing-Liang; Wu, Kuo-Ming |
| 國立成功大學 |
2000-01-03 |
Theoretical study of modulated absorption spectra: from quantum wire to quantum dot
|
Chen, Rong-Bin; Lu, Yan-Ten |
| 國立成功大學 |
2000 |
Critical thickness of quantum well for observing Franz-Keldysh oscillation
|
Chen, Rong-Bin; Lu, Yan-Ten |
| 國立成功大學 |
1999-12 |
GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy
|
Chang, J. R.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1999-10 |
Electronic excitations in cylinder superlattices
|
Shyu, Feng-Lin; �Lin, Ming-Fa; Lu, Yan-Ten |
| 國立成功大學 |
1999-06-07 |
High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy
|
Chang, Jia-Rong; Su, Yan-Kuin; Lin, Chuing-Liang; Wu, Kuo-Ming; Lu, Yan-Ten; Jaw, D. H.; Shiao, H. P.; Lin, W. |
| 國立成功大學 |
1998-10 |
Effects of Impurities on Excitons in a Quantum-Well - A Diffusion Monte-Carlo Study
|
Li, To-Sing; Lu, Yan-Ten |
| 國立成功大學 |
1998 |
Effects of the interface roughness on G -X valley mixing in GaAs/AlAs superlattices
|
Chen, R. B.; Shyu, F. L.; Lu, Yan-Ten |
| 國立成功大學 |
1998 |
Magnetic field induced Type I to Type II transition in the thin AlAs/GaAs quantum well
|
Chang, C. P.; Lu, Yan-Ten |
| 國立成功大學 |
1998 |
Magnetoexciton in the Thin AlAs/GaAs Quantum-Well
|
Chang, C. P.; Chen, R. B.; Lu, Yan-Ten |
| 國立成功大學 |
1996 |
Doping Effects on Normal Incidence Interband and Intersubband Optical Tranistioin on GaSb/InAs Superlattices
|
Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1996 |
8-14 m m Normal Incident Optical Transition in GaSb/InAs Superlattices
|
Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1994-06 |
原子在階梯表面的擴散
|
Lu, Yan-Ten |
| 國立成功大學 |
1994-02 |
K-space formulation of G-X mixing for excitons in thin GaAs/AlAs quantum well
|
Chang, C. P.; Lu, Yan-Ten |
| 國立成功大學 |
1994 |
K-space formulation of -X mixing for excitons in thin GaAs/AlAs quantum well
|
Chang, C. P.; Lu, Yan-Ten |
| 國立成功大學 |
1994 |
Electroabsorption of thin AlAs/GaAs quantum well : effect of Γ-X valley mixing
|
Chang, C. P.; Lu, Yan-Ten |
| 國立成功大學 |
1994 |
Steady-state distribution of adatoms on terraces of a stepped surface
|
Lu, Yan-Ten |
| 國立成功大學 |
1993 |
Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector
|
Chen, Shi-Ming; Su, Yan-Kuin; Lu, Yan-Ten |
| 國立成功大學 |
1993 |
Surface and diffusion effects on double-layer delta-dopping
|
Chiu, Hsiu-Lan; Lu, Yan-Ten |
| 國立成功大學 |
1993 |
Effects of elastic strain on the band offset and effetcive mass of strained InGaSb epilayers
|
Chen, S. M.; Su, Y. K.; Lu, Yan-Ten |
| 國立成功大學 |
1993 |
Factorisation of the Schrodinger equation
|
Lin, Ming-Hong; Lu, Yan-Ten |
| 國立成功大學 |
1993 |
Electroabsorption in the AlAs/GaAs asymmetrical coupled quantum well
|
Lu, Yan-Ten |
| 國立成功大學 |
1993 |
Effects of valley mixing on exciton binding energy in a coupled quantum well
|
Lu, Yan-Ten |
| 國立成功大學 |
1992-05 |
Kinetic mechanism for the transformation of single-layer steps into double-layer steps by Si deposition on a vicinal Si(100) surface
|
Zhang, �Zhenyu; Lu, Yan-Ten; Metiu, �Horia |
| 國立成功大學 |
1992 |
Epitaxy on vicinal surfaces : the critical flux and the diffusion coefficients
|
Lu, Yan-Ten; Metiu, Horia |
