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Taiwan Academic Institutional Repository >
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"lu ying hsin"
Showing items 1-10 of 29 (3 Page(s) Totally)
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| 國立交通大學 |
2019-09-02T07:46:10Z |
A Dual-Gate InGaZnO4-Based Thin-Film Transistor for High-Sensitivity UV Detection
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Chen, Po-Hsun; Tsao, Yu-Ching; Chien, Yu-Chieh; Chiang, Hsiao-Cheng; Chen, Hua-Mao; Lu, Ying-Hsin; Shih, Chih-Cheng; Tai, Mao-Chou; Chen, Guan-Fu; Tsai, Yu-Lin; Huang, Hui-Chun; Tsai, Tsung-Ming; Chang, Ting-Chang |
| 國立交通大學 |
2018-08-21T05:54:10Z |
Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
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Lu, Ying-Hsin; Chang, Ting-Chang; Liao, Jih-Chien; Chen, Li-Hui; Lin, Yu-Shan; Chen, Ching-En; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-Yu; Lien, Chen-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2018-08-21T05:54:04Z |
Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs
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Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Chen, Li-Hui; Tsai, Jyun-Yu; Chen, Ching-En; Lu, Ying-Hsin; Liu, Hsi-Wen; Liao, Jin-Chien; Chang, Kuan-Chang |
| 國立交通大學 |
2018-08-21T05:53:13Z |
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
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Yang, Chung-I; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Chou, Wu-Ching; Chen, Guan-Fu; Huang, Shin-Ping; Zheng, Yu-Zhe; Wang, Yu-Xuan; Liu, Hsi-Wen; Lin, Chien-Yu; Lin, Yu-Shan; Lu, Ying-Hsin; Zhang, Shengdong |
| 國立交通大學 |
2018-08-21T05:52:56Z |
Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
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Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Chen, Li-Hui; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Hsi-Wen; Lu, Ying-Hsin; Liao, Jin-Chien; Ciou, Fong-Min; Lin, Yu-Shan |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
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Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2017-04-21T06:56:20Z |
Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal-oxide-semiconductor field effect transistors
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Lu, Ying-Hsin; Chang, Ting-Chang; Ho, Szu-Han; Chen, Ching-En; Tsai, Jyun-Yu; Liu, Kuan-Ju; Liu, Xi-Wen; Lin, Chien-yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Yen, Wei-Ting |
| 國立交通大學 |
2017-04-21T06:56:20Z |
Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs
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Lin, Chien-Yu; Chang, Ting-Chang; Liu, Kuan-Ju; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Hsi-Wen; Lu, Ying-Hsin; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2017-04-21T06:55:25Z |
Abnormal Transconductance Enhancement under Positive Bias Stress in Nanoscale n-Channel Fin Field-Effect-Transistors
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Liu, Kuan-Ju; Chang, Ting-Chang; Lin, Chien-Yu; Chen, Ching-En; Tsai, Jyun-Yu; Lu, Ying-Hsin; Liu, Hsi-Wen; Cheng, Osbert; Huang, Cheng-Tung |
| 國立交通大學 |
2017-04-21T06:55:22Z |
Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate
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Liu, Hsi-Wen; Chang, Ting-Chang; Tsai, Jyun-Yu; Chen, Ching-En; Liu, Kuan-Ju; Lu, Ying-Hsin; Lin, Chien-Yu; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han |
Showing items 1-10 of 29 (3 Page(s) Totally)
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