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| 臺大學術典藏 |
2018-09-10T03:28:36Z |
Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states
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Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
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Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺北醫學大學 |
2005 |
Effect of Pulsed Radiofrequency.Treatment of the Dorsal Root Ganglion on B-Endophine Level in Rats with Formalin-induced Pain
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林朝順; Qian TL; Gao CR; Lu ZH; Mok MS; Wu CC; Lin CS; Lee YW |
Showing items 1-4 of 4 (1 Page(s) Totally)
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